Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-Range Buck-Boost Converters

The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E‑HEMT transistors influences the overall efficiency of the converter. The article presents a process of selection of the most efficient topology for stabilization of the battery storage voltage (9 V – 36 V) at the level of 24 V, which enables the usage of ultracapacitor energy storage in a wide range of applications, e.g., in automated electric vehicles. In order to choose the most suitable topology, simulation and laboratory research were conducted. The two most promising topologies were selected for verification in the experimental model. Each of the converters was constructed in two versions: with Si and with GaN E-HEMT transistors. The paper presents experimental research results that consist of precise power loss measurements and thermal analysis. The performance with an increased switching frequency of converters was also examined

Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-Range Buck-Boost Converters

The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E‑HEMT transistors influences the overall efficiency of the converter. The article presents a process of selection of the most efficient topology for stabilization of the battery storage voltage (9 V – 36 V) at the level of 24 V, which enables the usage of ultracapacitor energy storage in a wide range of applications, e.g., in automated electric vehicles. In order to choose the most suitable topology, simulation and laboratory research were conducted. The two most promising topologies were selected for verification in the experimental model. Each of the converters was constructed in two versions: with Si and with GaN E-HEMT transistors. The paper presents experimental research results that consist of precise power loss measurements and thermal analysis. The performance with an increased switching frequency of converters was also examined

Mathematical and simulation modeling of dual active bridge

The paper is a structured, in-depth analysis of dual active bridge modeling. In the research new, profound dual active bridge converter (DAB) circuit model is presented. Contrary to already described idealized models, all critical elements including numerous parasitic components were described. The novelty is the consideration of a threshold voltage of diodes and transistors in the converter equations. Furthermore, a lossy model of leakage inductance in an AC circuit is also included. Based on the circuit equations, a small-signal dual active bridge converter model is described. That led to developing control of the input and output transfer function of the dual active bridge converter model. The comparison of the idealized model, circuit simulation (PLECS), and an experimental model was conducted methodically and confirmed the high compatibility of the introduced mathematical model with the experimental one. Proposed transfer functions can be used when designing control of systems containing multiple converters accelerating the design process, and accurately reproducing the existing systems, which was also reported in the paper