Refrigerator based on the Coulomb barrier for single-electron tunneling

We propose a remarkably simple electronic refrigerator based on the Coulomb barrier for single-electron tunneling. A fully normal single-electron transistor is voltage V biased at a gate position such that tunneling through one of the junctions costs an energy of about kBT≪eV,EC, where T is the temperature and EC is the transistor charging energy. The tunneling in the junction with positive energy cost cools both leads attached to it. Immediate practical realizations of such a refrigerator make use of Andreev mirrors which suppress heat current while maintaining full electric contact.Peer reviewe

Microwave photon-mediated interactions between semiconductor qubits

The realization of a coherent interface between distant charge or spin qubits in semiconductor quantum dots is an open challenge for quantum information processing. Here we demonstrate both resonant and non-resonant photon-mediated coherent interactions between double quantum dot charge qubits separated by several tens of micrometers. We present clear spectroscopic evidence of the collective enhancement of the resonant coupling of two qubits. With both qubits detuned from the resonator we observe exchange coupling between the qubits mediated by virtual photons. In both instances pronounced bright and dark states governed by the symmetry of the qubit-field interaction are found. Our observations are in excellent quantitative agreement with master-equation simulations. The extracted two-qubit coupling strengths significantly exceed the linewidths of the combined resonator-qubit system. This indicates that this approach is viable for creating photon-mediated two-qubit gates in quantum dot based systems.Comment: 14 pages, 10 figures and 6 table

Radio-frequency C-V measurements with sub-attofarad sensitivity

We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test the measurement method on InSb and InAs nanowires at dilution-refrigerator temperatures. The measured capacitances are consistent with those inferred from the periodicity of the Coulomb blockade of quantum dots realized in the same devices. In an implementation of the resonator using an off-chip superconducting spiral inductor we find sensitivity values reaching down to 75~zF/\sqHz at 1~kHz measurement bandwidth, and noise down to 0.45~aF at 1~Hz bandwidth. We estimate the sensitivity of the method for a number of other implementations. In particular we predict typical sensitivity of about 40~zF/\sqHz at room temperature with a resonator comprised of off-the-shelf components. Of several proposed applications, we demonstrate two: the capacitance measurement of several identical 80~nm-wide gates with a single resonator, and the field-effect mobility measurement of an individual nanowire with the gate capacitance measured in-situ