Tensile-strained GaAsN quantum dots on InP

Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situannealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.Peer reviewe