Gate-capacitance extraction from RF C-V measurements

In this work, a full two-port analysis of an RF C-V measurement set-up is given. This two-port analysis gives insight on the limitations of the commonly used gate capacitance extraction, based on the Y/sub 11/ parameter of the device. It is shown that the parasitics of the device can disturb the extracted gate capacitance and a new extraction scheme, based on the Z-matrix, is introduced that eliminates the effect of these parasitics. Measurement results prove the validity of this new extraction scheme, under different conditions

Parse-tree annotations meet re-engineering concerns

We characterise a computational model for processing annotated parse trees. The model is basically rewriting-based with specific provisions for dealing with annotations along the ordinary rewrite steps. Most notably, there are progression methods, which define a default for annotating the results of rewriting. There are also access methods, which can be used in the rewrite rules in order to retrieve annotations from the input and to establish annotations in the output. Our approach extends the basic rewriting paradigm with support for the separation of concerns that involve annotations. This is motivated in the context of transformations for software re-engineering where annotations can be used to implement concerns such as layout preservation and reversible preprocessing

On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs

The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter - the STM tip's work function - is determined experimentally. The voltage dependent potential configuration and band bending situation is derived. Ways to validate the calculations with the experiment are discussed. Differential conductivity maps reveal that the triangular contrasts are only observed with a depletion layer present under the STM tip. The tunnel process leading to the anisotropic contrasts calls for electrons to tunnel through vacuum gap and a finite region in the semiconductor.Comment: 11 pages, 8 figure