10 research outputs found

    Dissociation of two-dimensional excitons in monolayer WSe<sub>2</sub>

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    In two-dimensional semiconductors excitons are strongly bound, suppressing the creation of free carriers. Here, the authors investigate the main exciton dissociation pathway in p-n junctions of monolayer WSe2 by means of time and spectrally resolved photocurrent measurements

    Graphene plasmon waveguiding and hybridization in individual and paired nanoribbons

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    Plasmons in doped graphene exhibit relatively large confinement and long lifetime compared to noble-metal plasmons. Here, we study the propagation properties of plasmons guided along individual and interacting graphene nanoribbons. Besides their tunability via electrostatic gating, an additional handle to control these excitations is provided by the dielectric environment and the relative arrangement of the interacting waveguides. Plasmon interaction and hybridization in pairs of neighboring aligned ribbons are shown to be strong enough to produce dramatic modifications in the plasmon field profiles. We introduce a universal scaling law that considerably simplifies the analysis an understanding of these plasmons. Our work provides the building blocks to construct graphene plasmon circuits for future compact plasmon devices with potential application to optical signal processing, infrared sensing, and quantum information technology

    Ultrathin Eu- and Er-Doped Y2O3 Films with Optimized Optical Properties for Quantum Technologies

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    Atomic layer deposited (ALD) YO thin films have been thoroughly investigated for optical or electronic applications. The coherent spectroscopy of lanthanide ions doped into this material has also recently attracted increasing interest in the field of quantum technologies for which they are considered promising candidates in quantum memories or as spin-photon interfaces. However, these most demanding applications require a deep control over the local positioning of the ions and their close environment in the crystalline matrix. This study focuses on the structural as well as optical properties of Eu and Er dopants in YO using photoluminescence (PL), luminescence decay times, and inhomogeneous line width (Γ) measurements within this particular context. While as-grown ALD films do not provide an ideal host for the emitters, we demonstrate that by optimizing the deposition conditions and using appropriate annealing post treatments narrow inhomogeneous lines can be obtained for the F↔D transition of Eu even for nanoscale films. Furthermore, about 1.5 ms lifetime has been measured for the infrared telecom transition of Er in ultrathin films (<10 nm), which is an order of magnitude higher than in nanoparticles of the same size. These results validate optimized rare-earth-doped ALD YO films as a suitable platform for photonics applications where few-nanometer-thick films with well-localized emitters are mandatory. This approach provides the first building blocks toward the development of more complex devices for quantum sensing or hybrid structures coupled with other systems such as two-dimensional materials

    Experimental signatures of the transition from acoustic plasmon to electronic sound in graphene

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    : Fermi liquids respond differently to perturbations depending on whether their frequency is higher (collisionless regime) or lower (hydrodynamic regime) than the interparticle collision rate. This results in a different phase velocity between the collisionless zero sound and the hydrodynamic first sound. We performed terahertz photocurrent nanoscopy measurements on graphene devices, with a metallic gate close to the graphene layer, to probe the dispersion of propagating acoustic plasmons, the counterpart of sound modes in electronic Fermi liquids. We report the observation of a change in the plasmon phase velocity when the excitation frequency approaches the electron-electron collision rate that is compatible with the transition between the zero and the first sound mode

    Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene

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    Due to its outstanding electrical properties and chemical stability, graphene finds widespread use in various electrochemical applications. Although the presence of electrolytes strongly affects its electrical conductivity, the underlying mechanism has remained elusive. Here, we employ terahertz spectroscopy as a contact-free means to investigate the impact of ubiquitous cations (Li, Na, K, and Ca) in aqueous solution on the electronic properties of SiO-supported graphene. We find that, without applying any external potential, cations can shift the Fermi energy of initially hole-doped graphene by ∼200 meV up to the Dirac point, thus counteracting the initial substrate-induced hole doping. Remarkably, the cation concentration and cation hydration complex size determine the kinetics and magnitude of this shift in the Fermi level. Combined with theoretical calculations, we show that the ion-induced Fermi level shift of graphene involves cationic permeation through graphene. The interfacial cations located between graphene and SiO electrostatically counteract the substrate-induced hole doping effect in graphene. These insights are crucial for graphene device processing and further developing graphene as an ion-sensing material

    Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction

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    Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that exploits the photothermoelectric (PTE) effect, based on a design that employs a dual-gated, dipolar antenna with a gap of ?100 nm. This narrow-gap antenna simultaneously creates a pn junction in a graphene channel located above the antenna and strongly concentrates the incoming radiation at this pn junction, where the photoresponse is created. We demonstrate that this novel detector has an excellent sensitivity, with a noise-equivalent power of 80 pW/Hz at room temperature, a response time below 30 ns (setup-limited), a high dynamic range (linear power dependence over more than 3 orders of magnitude) and broadband operation (measured range 1.8-4.2 THz, antenna-limited), which fulfills a combination that is currently missing in the state-of-the-art detectors. Importantly, on the basis of the agreement we obtained between experiment, analytical model, and numerical simulations, we have reached a solid understanding of how the PTE effect gives rise to a THz-induced photoresponse, which is very valuable for further detector optimization

    Near-field photocurrent nanoscopy on bare and encapsulated graphene

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    Optoelectronic devices utilizing graphene have demonstrated unique capabilities and performances beyond state-of-the-art technologies. However, requirements in terms of device quality and uniformity are demanding. A major roadblock towards high-performance devices are nanoscale variations of the graphene device properties, impacting their macroscopic behaviour. Here we present and apply non-invasive optoelectronic nanoscopy to measure the optical and electronic properties of graphene devices locally. This is achieved by combining scanning near-field infrared nanoscopy with electrical read-out, allowing infrared photocurrent mapping at length scales of tens of nanometres. Using this technique, we study the impact of edges and grain boundaries on the spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can readily be applied to encapsulated graphene devices. We observe charge build-up near the edges and demonstrate a solution to this issue

    Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

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    We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field
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