7,386 research outputs found
Large Magnetic Susceptibility Anisotropy of Metallic Carbon Nanotubes
Through magnetic linear dichroism spectroscopy, the magnetic susceptibility
anisotropy of metallic single-walled carbon nanotubes has been extracted and
found to be 2-4 times greater than values for semiconducting single-walled
carbon nanotubes. This large anisotropy is consistent with our calculations and
can be understood in terms of large orbital paramagnetism of electrons in
metallic nanotubes arising from the Aharonov-Bohm-phase-induced gap opening in
a parallel field. We also compare our values with previous work for
semiconducting nanotubes, which confirm a break from the prediction that the
magnetic susceptibility anisotropy increases linearly with the diameter.Comment: 4 pages, 4 figure
Terahertz magneto-spectroscopy of transient plasmas in semiconductors
Using synchronized near-infrared (NIR) and terahertz (THz) lasers, we have
performed picosecond time-resolved THz spectroscopy of transient carriers in
semiconductors. Specifically, we measured the temporal evolution of THz
transmission and reflectivity after NIR excitation. We systematically
investigated transient carrier relaxation in GaAs and InSb with varying NIR
intensities and magnetic fields. Using this information, we were able to
determine the evolution of the THz absorption to study the dynamics of
photocreated carriers. We developed a theory based on a Drude conductivity with
time-dependent density and density-dependent scattering lifetime, which
successfully reproduced the observed plasma dynamics. Detailed comparison
between experimental and theoretical results revealed a linear dependence of
the scattering frequency on density, which suggests that electron-electron
scattering is the dominant scattering mechanism for determining the scattering
time. In InSb, plasma dynamics was dramatically modified by the application of
a magnetic field, showing rich magneto-reflection spectra, while GaAs did not
show any significant magnetic field dependence. We attribute this to the small
effective masses of the carriers in InSb compared to GaAs, which made the
plasma, cyclotron, and photon energies all comparable in the density, magnetic
field, and wavelength ranges of the current study.Comment: 8 pages, 9 figures, submitted to Phys. Rev.
Circular-Polarization Dependent Cyclotron Resonance in Large-Area Graphene in Ultrahigh Magnetic Fields
Using ultrahigh magnetic fields up to 170 T and polarized midinfrared
radiation with tunable wavelengths from 9.22 to 10.67 um, we studied cyclotron
resonance in large-area graphene grown by chemical vapor deposition.
Circular-polarization dependent studies reveal strong p-type doping for
as-grown graphene, and the dependence of the cyclotron resonance on radiation
wavelength allows for a determination of the Fermi energy. Thermal annealing
shifts the Fermi energy to near the Dirac point, resulting in the simultaneous
appearance of hole and electron cyclotron resonance in the magnetic quantum
limit, even though the sample is still p-type, due to graphene's linear
dispersion and unique Landau level structure. These high-field studies
therefore allow for a clear identification of cyclotron resonance features in
large-area, low-mobility graphene samples.Comment: 9 pages, 3 figure
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