Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region

A silicon avalanche photodiode fabricated by CMOS process was characterized at 405 nm wavelength for Blu-ray applications. The avalanche gain of 36, the maximum responsivity of 2.61 A/W, and the bandwidth of 300 MHz were achieved. © 2012 IEEE

10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process

Silicon avalanche photodiode was fabricated by O.lSjum CMOS process and was characterized. The bandwidth of 10GHz with the sensitivity of 0.1 AW was achieved with the electrode spacing of 0.84/μm and the detection area of 10x10/μm2. © 2014 Engineers Australia

High speed and high responsivity avalanche photodiode fabricated by standard CMOS process in blue wavelength region

金沢大学理工研究域フロンティア工学系Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm2. The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system