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10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 μm CMOS process
Authors
Gyobu Ryoichi
Hishiki Takuya
+3 more
Iiyama Koichi
Maruyama Takeo
Shimotori Toshiyuki
Publication date
10 July 2014
Publisher
IEEE Computer Society
Abstract
Silicon avalanche photodiode was fabricated by O.lSjum CMOS process and was characterized. The bandwidth of 10GHz with the sensitivity of 0.1 AW was achieved with the electrode spacing of 0.84/μm and the detection area of 10x10/μm2. © 2014 Engineers Australia
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Last time updated on 06/05/2019
