Decoding the activity of neuronal populations in macaque primary visual cortex

Visual function depends on the accuracy of signals carried by visual cortical neurons. Combining information across neurons should improve this accuracy because single neuron activity is variable. We examined the reliability of information inferred from populations of simultaneously recorded neurons in macaque primary visual cortex. We considered a decoding framework that computes the likelihood of visual stimuli from a pattern of population activity by linearly combining neuronal responses and tested this framework for orientation estimation and discrimination. We derived a simple parametric decoder assuming neuronal independence and a more sophisticated empirical decoder that learned the structure of the measured neuronal response distributions, including their correlated variability. The empirical decoder used the structure of these response distributions to perform better than its parametric variant, indicating that their structure contains critical information for sensory decoding. These results show how neuronal responses can best be used to inform perceptual decision-making

Conduction band tight-binding description for silicon applied to phosphorous donors

A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented. The reliability of the proposed parametrization is assessed by performing systematic comparisons between the descriptions of donor impurities in Si using this parametrization and previously reported ones. The spectral decomposition of the donor wavefunction demonstrates the importance of incorporating full band effects for a reliable representation, and that an incomplete real space description results from a truncated reciprocal space expansion as proposed within the effective mass theory.Comment: 4 pages, 3 figure

Charged mobile complexes in magnetic fields: A novel selection rule for magneto-optical transitions

The implications of magnetic translations for internal optical transitions of charged mobile electron-hole ($e$--$h$) complexes and ions in a uniform magnetic field $B$ are discussed. It is shown that transitions of such complexes are governed by a novel exact selection rule. Internal intraband transitions of two-dimensional (2D) charged excitons $X^-$ in strong magnetic fields are considered as an illustrative example.Comment: 4 pages, 2 figure

Love kills: Simulations in Penna Ageing Model

The standard Penna ageing model with sexual reproduction is enlarged by adding additional bit-strings for love: Marriage happens only if the male love strings are sufficiently different from the female ones. We simulate at what level of required difference the population dies out.Comment: 14 pages, including numerous figure

Photoexcited transients in disordered semiconductors: Quantum coherence at very short to intermediate times

We study theoretically electron transients in semiconductor alloys excited by light pulses shorter than 100 femtoseconds and tuned above the absorption edge during and shortly after the pulse, when disorder scattering is dominant. We use non-equilibrium Green functions employing the field-dependent self-consistent Born approximation. The propagators and the particle correlation function are obtained by a direct numerical solution of the Dyson equations in differential form. For the purely elastic scattering in our model system the solution procedures for the retarded propagator and for the correlation function can be decoupled.The propagator is used as an input in calculating the correlation function. Numerical results combined with a cumulant expansion permit to separate in a consistent fashion the dark and the induced parts of the self-energy. The dark behavior reduces to propagation of strongly damped quasi-particles; the field induced self-energy leads to an additional time non-local coherence. The particle correlation function is formed by a coherent transient and an incoherent back-scattered component. The particle number is conserved only if the field induced coherence is fully incorporated. The transient polarization and the energy balance are also obtained and interpreted.Comment: Accepted for publication in Phys. Rev. B; 37 pages,17 figure

External field control of donor electron exchange at the Si/SiO2 interface

We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e. 1-qubit operation) between the donor and the interface by electric and magnetic fields. We establish conditions to keep a donor-bound state at the interface in the absence of local surface gates, and estimate the maximum planar density of donors allowed to avoid the formation of a 2-dimensional electron gas at the interface. We also calculate the times involved in single electron shuttling between the donor and the interface. For a donor pair, we find that under certain conditions the exchange coupling (i.e. 2-qubit operation) between the respective electron pair at the interface may be of the same order of magnitude as the coupling in GaAs-based two-electron double quantum dots where coherent spin manipulation and control has been recently demonstrated (for example for donors ~10 nm below the interface and \~40 nm apart, J~10^{-4} meV), opening the perspective for similar experiments to be performed in Si.Comment: 11 pages, 15 figures. Changes in Eq. 24 plus minor typo

Deformation of the Fermi surface in the extended Hubbard model

The deformation of the Fermi surface induced by Coulomb interactions is investigated in the t-t'-Hubbard model. The interplay of the local U and extended V interactions is analyzed. It is found that exchange interactions V enhance small anisotropies producing deformations of the Fermi surface which break the point group symmetry of the square lattice at the Van Hove filling. This Pomeranchuck instability competes with ferromagnetism and is suppressed at a critical value of U(V). The interaction V renormalizes the t' parameter to smaller values what favours nesting. It also induces changes on the topology of the Fermi surface which can go from hole to electron-like what may explain recent ARPES experiments.Comment: 5 pages, 4 ps figure

Strong covalent bonding between two graphene layers

We show that two graphene layers stacked directly on top of each other (AA stacking) form strong chemical bonds when the distance between planes is 0.156 nm. Simultaneously, C-C in-plane bonds are considerably weakened from partial double-bond (0.141 nm) to single bond (0.154 nm). This polymorphic form of graphene bilayer is meta-stable w.r.t. the one bound by van der Waals forces at a larger separation (0.335 nm) with an activation energy of 0.16 eV/cell. Similarly to the structure found in hexaprismane, C forms four single bonds in a geometry mixing 90^{0} and 120^{0} angles. Intermediate separations between layers can be stabilized under external anisotropic stresses showing a rich electronic structure changing from semimetal at van der Waals distance, to metal when compressed, to wide gap semiconductor at the meta-stable minimum.Comment: tar gzip latex 4 pages 4 figure

Basic properties of nonsmooth Hormander's vector fields and Poincare's inequality

We consider a family of vector fields defined in some bounded domain of R^p, and we assume that they satisfy Hormander's rank condition of some step r, and that their coefficients have r-1 continuous derivatives. We extend to this nonsmooth context some results which are well-known for smooth Hormander's vector fields, namely: some basic properties of the distance induced by the vector fields, the doubling condition, Chow's connectivity theorem, and, under the stronger assumption that the coefficients belong to C^{r-1,1}, Poincare's inequality. By known results, these facts also imply a Sobolev embedding. All these tools allow to draw some consequences about second order differential operators modeled on these nonsmooth Hormander's vector fields.Comment: 60 pages, LaTeX; Section 6 added and Section 7 (6 in the previous version) changed. Some references adde

Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence

We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multi-valley structure of the Si conduction band, we show that inter-valley quantum interference has important consequences for single-qubit operations of P$_2^+$ charge qubits. In particular, the valley interference leads to a tunnel-coupling strength distribution centered around zero. On the other hand, we find that the Si bandstructure does not dramatically affect the electron-phonon coupling and consequently, qubit coherence. We also critically compare charge qubit properties for Si:P$_2^+$ and GaAs double quantum dot quantum computer architectures.Comment: 10 pages, 3 figure