837 research outputs found

    Synthesis of strontium ferrite/iron oxide exchange coupled nano-powders with improved energy product for rare earth free permanent magnet applications

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    We present a simple, scalable synthesis route for producing exchange coupled soft/hard magnetic composite powder that outperforms pure soft and hard phase constituents. Importantly, the composites is iron oxide based (SrFe12O19 and Fe3O4) and contain no rare earth or precious metal. The two step synthesis process consists of first precipitating, an Iron oxide/hydroxide precursor directly on top of SrFe12O19 nano-flakes, ensuring a very fine degree of mixing between the hard and the soft magnetic phases. We then use a second step that serves to reduce the precursor to create the proper soft magnetic phase and create the intimate interface necessary for exchange coupling. We establish a clear processing window; at temperatures below this window the desired soft phase is not produced, while higher temperatures result in deleterious reaction at the soft/hard phase interfaces, causing an improper ratio of soft to hard phases. Improvements of Mr, Ms, and (BH)max are 42%, 29% and 37% respectively in the SrFe12O19/Fe3O4 composite compared to pure hard phase (SrFe12O19). We provide evidence of coupling (exchange spring behavior) with hysteresis curves, first order reversal curve (FORC) analysis and recoil measurements.Comment: in J. Mater. Chem. C, 201

    Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

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    We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.Comment: Proceedings of the 12th Asia Pacific Physics Conferenc

    Prospective validation of quantitative CEA mRNA detection in peritoneal washes in gastric carcinoma patients

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    Prediction of peritoneal relapse is extremely important for gastric cancer patients after curative surgery. The present study prospectively validates the prognostic ability of quantifying carcinoembryonic antigen (CEA) mRNA in peritoneal washes by real-time reverse transcriptase–polymerase chain reaction. Based on a retrospective study of 197 curatively resected gastric cancer patients (training set), we determined a cutoff value of CEA mRNA using receiver-operating characteristic curve. We used this cutoff value to validate the risk of peritoneal recurrence in a new cohort of 86 gastric cancer patients (validation set) between July 2000 and December 2002 in a prospective study. During the median 30 months of postoperative surveillance, 20 of the 86 patients died, and 13 of the 20 developed peritoneal metastases. Peritoneal recurrence-free survival as well as overall survival was significantly worse in patients with positive CEA mRNA (P<0.0001). Multivariate analysis with the Cox proportional hazards model showed that positive CEA mRNA was a significant independent risk factor with both survival (P=0.0130) and peritoneal recurrence-free survival (P=0.0006) as end points. These results indicate that quantitation of CEA mRNA in peritoneal washes is a reliable prognostic indicator of peritoneal recurrence in the clinical setting

    Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process

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    Hydrogen silsesquioxane (HSQ) is a high resolution negative-tone electron beam resist allowing for direct transfer of nanostructures into silicon-on-insulator. Using this resist for electron beam lithography, we fabricate high density lithographically defined Silicon double quantum dot (QD) transistors. We show that our approach is compatible with very large scale integration, allowing for parallel fabrication of up to 144 scalable devices. HSQ process optimisation allowed for realisation of reproducible QD dimensions of 50 nm and tunnel junction down to 25 nm. We observed that 80% of the fabricated devices had dimensional variations of less than 5 nm. These are the smallest high density double QD transistors achieved to date. Single electron simulations combined with preliminary electrical characterisations justify the reliability of our device and process
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