Integrated Thermo-Electro-Mechanical Modeling of 3D e-Cubes Structures

The complex silicon systems formed by the several specialized devices like SOC, RF devices, power devices, MEMS wafers are fabricated in dedicated technologies. If the designer attempts to integrate them into the one big multifunctional system, he meets the new, yet unexplored fields for the multidisciplinary, mutually dependent thermal, electrical, EM and mechanical parameters modeling. This article attempts to clarify, and presents how to simplify this problem

SOI active pixel detectors of ionizing radiation - Technology and design development

This paper concerns the development of a novel monolithic active pixel radiation sensor based on SOI technology. In this device, the sensitive volume corresponds to a high resistivity SOI "handle" wafer and the front-end CMOS electronics is integrated in the SOI device layer. Pixel test matrices have been manufactured and are under extensive characterization. The conceptual design, together with architecture and technology issues is addressed; the latest experimental results are reported

Monolithic active pixel detector realized in silicon on insulator technology

The paper concerns the development of a novel monolithic silicon pixel detector, which exploits Silicon on Insulator substrates for the integration of the readout electronics and pixel detector. In the discussed solution, the readout CMOS circuit is manufactured in the thin device layer over the buried oxide while the pixel matrix is created in the high resistive handle wafer of the SOI substrate. Small test matrices of the SOI sensor have been recently manufactured and preliminary tests with an infrared laser light and a radioactive source indicated the sensor sensitivity for the ionizing radiation. The concept and design of the SOI detector together with the preliminary measurement results of the sensor matrices are addressed in the paper

Silicon ultra fast cameras for electron and gamma sources in medical applications: a progress report

SUCIMA (Silicon Ultra fast Cameras for electron and gamma sources In Medical Applications) is a project approved by the European Commission within the Fifth Framework Programme, with the primary goal of developing a real time dosimeter based on direct detection of ionising particles in a position sensitive Silicon sensor. The main applications of this device are imaging of intravascular brachytherapy radioactive sources with-activities up to 3 GBq and real time monitoring of hadrontherapy beams. In order to perform a feasibility study, during the first two years a real time dosimeter has been engineered using Silicon microstrip detectors read out by an integrating dead-timeless front-end electronics. The prototypes have been qualified as relative dosimeter with respect to certified secondary standards; moreover, further measurements are on going in order to investigate the possibility to use the sensors as absolute dosimeters. Since the final device is supposed to provide a two dimensional image, two different Monolithic Active Pixel dosimeters have been designed and produced by the collaboration based on CMOS and Silicon On Insulator technologies. The main features of the two sensors are presented in this paper

The SUCIMA project: A status report on high granularity dosimetry and proton beam monitoring

The SUCIMA collaboration has been developing instruments and methods for real-time, high granularity imaging of extended electron sources. In particular, dosimetry of intravascular brachytherapy beta sources has been intensively studied, together with monitoring of hadrontherapy beams by imaging of secondary electrons emitted by a non-disruptive target. The paper reports the latest results oil absolute dosimetry with a large-area silicon strip detectors and on beam monitoring with a hybrid pad sensor

The SUCIMA project: A status report on high granularity dosimetry and proton beam monitoring

LEPSIThe SUCIMA collaboration has been developing instruments and methods for real-time, high granularity imaging of extended electron sources. In particular, dosimetry of intravascular brachytherapy β sources has been intensively studied, together with monitoring of hadrontherapy beams by imaging of secondary electrons emitted by a non-disruptive target. The paper reports the latest results on absolute dosimetry with a large-area silicon strip detectors and on beam monitoring with a hybrid pad sensor