Jones matrix mapping of polycrystalline networks of layers of main types of amino acids

The given data on the optical arrangement, in which the coordinate distributions of the real and imaginary component of the elements of the Jones matrix of optically thin polycrystalline layers are determined. Algorithms are presented and an experimental method for measuring the real and imaginary component of Jones-matrix images is analyzed. The experimental results of the study of statistical, correlation, and fractal parameters, which characterize the real component of the Jones-matrix image of polycrystalline networks of flat layers of the main types of human amino acids, are presented

Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology

Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles

Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology

Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles

Design, Modeling and Simulation of MEMS Devices on Si, SiC, and Diamond for Harsh Environment Applications

Set of micromechanical (MEMS) test structures designed for fabrication on silicon, silicon carbide and diamond substrates has been successfully designed. A dedicated mask-set development has been carried along with numerical simulations performed with assistance of a dedicated design and modelling CoventorWare™ - toolset by Coventor. A set of sample simulations presented in this paper has been performed for specific simulation domains focused on silicon-alternative material reality to proof the usefulness of proposed substrates. The aim was to verify its applicability for MEMS design and confirm an outstanding performance of the resulting device which effectively opens a new area of interest for subsequent research and development efforts

Semi-automatic test system for characterization of ASIC/MPWS

A measurement system for integrated circuit testing has been developed. It consists of a semi-automatic probe station and a set of measurement equipment controlled by commercially available measurement software. The probe station is controlled by dedicated software. Both the measurement and station-control software communicate using the DDE protocol. The measurement system is flexible. It is particularly suitable for semi-automatic testing of multi-project wafers. Output data generated by the system is used for the characterization of the CMOS technologies

Modeling, Simulation and Calibration of Silicon Wet Etching

The methods of parameter optimization in Etch3DTM simulator and the results of the comparison of simulations of silicon etching in KOH with experiments are presented. The aim of this study was to calibrate the tool to a set of process conditions that is offered by Institute of Electron Technology (ITE). The Taguchi approach was used to analyze the influence of every remove probability function (RPF) parameter on one or more output parameters. This allowed tuning the results of simulation to the results of real etching performed in ITE

Nichrome Capacitors on Polycarbonate Substrate for Monitoring Cell Culture Using Impedance Sensing Technique

The aim of this work was to present a method of tissue culture research by measuring the impedance of cells cultured in the presence of nichrome. For this purpose, the Electric Cell-substrate Impedance Sensing system was used with a prototype substrate containing comb capacitors made of nichrome. Magnetron sputtering, photolithography and etching processes were used to produce the thin-film electrodes. In the experimental part, cells of mouse fibroblast cell line L929 were cultured according to the instruction manual in complete medium, under controlled growth conditions. Inoculation of arrays was carried out by 300 microliters per well of cell suspension at ~1.2×105 cells/ml. The results of the monitoring cells behavior in tissue culture indicate good cell viability and proliferative potential

A versatile tool for extraction of MOSFETs parameters

Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits characterization and design. A versatile tool for the MOSFET parameter extraction has been developed in the Institute of Electron Technology (IET). It is used to monitor the technologies applied for fabrication of several groups of devices, e.g., CMOS ASICs, SOI pixel detectors. At present two SPICE MOSFET models (LEVEL = 1, 2) have been implemented in the extraction tool. The LEVEL = 3 model is currently being implemented. The tool combines different methods of parameter extraction based on local as well as global fitting of models to experimental data

Multi-Domain Modeling and Simulations of the Heterogeneous Systems

This paper discusses the multi-domain modeling and simulation issues of the design and analysis of heterogeneous integrated systems. Modeling and simulation methodlogy and tools are also discussed