Relation between thickness, crystallitesize and magnetoresistance of nanostructuredLa1−xSrxMnyO3±δ films for magnetic field sensors

In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was usedfor the growth of nanostructured La1−xSrxMnyO3±δ (LSMO) films on ceramic Al2O3 substrates. The compositional, structural andmagnetoresistive properties of the nanostructured manganite were changed by variation of the processing conditions: precursorsolution concentration, supply frequency and number of supply sources during the PI-MOCVD growth process. The results showedthat the thick (≈400 nm) nanostructured LSMO films, grown using an additional supply source of precursor solution in an exponen-tially decreasing manner, exhibit the highest magnetoresistance and the lowest magnetoresistance anisotropy. The possibility to usethese films for the development of magnetic field sensors operating at room temperature is discusse