287 research outputs found
Submerged entry nozzle clogging during continuous casting of Al-killed steel
Nozzle clogging is a common problem in the production of continuously cast Al-killed steels. Clogging occurs when there are solid inclusions in molten steel at casting temperatures. SENs (Submerged entry nozzles) from continuous casting of Al-killed low alloy steel grades with increased content of sulfur (0,020 to 0,035 % S) were examined. The examinations revealed that the deposits are mainly alumina based, with spinel and sulfur inclusions and some entrapped steel melt. It was concluded that the process of clogging begins when the steel melt infiltrates the refractory and removes the protective zirconia surface, thus allowing the adhesion of fine solid aluminates, which form the deposits
Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field
We report on terahertz radiation detection with InGaAs/InAlAs Field Effect
Transistors in quantizing magnetic field. The photovoltaic detection signal is
investigated at 4.2 K as a function of the gate voltage and magnetic field.
Oscillations analogous to the Shubnikov-de Haas oscillations, as well as their
strong enhancement at the cyclotron resonance, are observed. The results are
quantitatively described by a recent theory, showing that the detection is due
to rectification of the terahertz radiation by plasma waves related
nonlinearities in the gated part of the channel.Comment: 4 pages, 3 figure
Evaluation of time-dependent correlators after a local quench in iPEPS: hole motion in the t-J model
Infinite projected entangled pair states (iPEPS) provide a convenient
variational description of infinite, translationally-invariant two-dimensional
quantum states. However, the simulation of local excitations is not directly
possible due to the translationally-invariant ansatz. Furthermore, as iPEPS are
either identical or orthogonal, expectation values between different states as
required during the evaluation of non-equal-time correlators are ill-defined.
Here, we show that by introducing auxiliary states on each site, it becomes
possible to simulate both local excitations and evaluate non-equal-time
correlators in an iPEPS setting under real-time evolution. We showcase the
method by simulating the t-J model after a single hole has been placed in the
half-filled antiferromagnetic background and evaluating both return
probabilities and spin correlation functions, as accessible in quantum gas
microscopes.Comment: 12 pages, 5 figures, minor revision requested by SciPost Physic
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Resonant frequencies of the two-dimensional plasma in FETs increase with the
reduction of the channel dimensions and can reach the THz range for sub-micron
gate lengths. Nonlinear properties of the electron plasma in the transistor
channel can be used for the detection and mixing of THz frequencies. At
cryogenic temperatures resonant and gate voltage tunable detection related to
plasma waves resonances, is observed. At room temperature, when plasma
oscillations are overdamped, the FET can operate as an efficient broadband THz
detector. We present the main theoretical and experimental results on THz
detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape
Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells
We investigate experimentally transport in gated microsctructures containing
a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal
resistances using many contacts prove that in the depletion regime the current
is carried by the edge channels, as expected for a two-dimensional topological
insulator. However, high and non-quantized values of channel resistances show
that the topological protection length (i.e. the distance on which the carriers
in helical edge channels propagate without backscattering) is much shorter than
the channel length, which is ~100 micrometers. The weak temperature dependence
of the resistance and the presence of temperature dependent reproducible
quasi-periodic resistance fluctuations can be qualitatively explained by the
presence of charge puddles in the well, to which the electrons from the edge
channels are tunnel-coupled.Comment: 8 pages, 4 figures, published versio
Atomistic defect states as quantum emitters in monolayer MoS
Quantum light sources in solid-state systems are of major interest as a basic
ingredient for integrated quantum device technologies. The ability to tailor
quantum emission through deterministic defect engineering is of growing
importance for realizing scalable quantum architectures. However, a major
difficulty is that defects need to be positioned site-selectively within the
solid. Here, we overcome this challenge by controllably irradiating
single-layer MoS using a sub-nm focused helium ion beam to
deterministically create defects. Subsequent encapsulation of the ion bombarded
MoS flake with high-quality hBN reveals spectrally narrow emission lines
that produce photons at optical wavelengths in an energy window of one to two
hundred meV below the neutral 2D exciton of MoS. Based on ab-initio
calculations we interpret these emission lines as stemming from the
recombination of highly localized electron-hole complexes at defect states
generated by the helium ion bombardment. Our approach to deterministically
write optically active defect states in a single transition metal
dichalcogenide layer provides a platform for realizing exotic many-body
systems, including coupled single-photon sources and exotic Hubbard systems.Comment: Main: 9 pages, 3 figures + SI: 19 pages, 10 figure
Temperature-induced topological phase transition in HgTe quantum wells
We report a direct observation of temperature-induced topological phase
transition between trivial and topological insulator in HgTe quantum well. By
using a gated Hall bar device, we measure and represent Landau levels in fan
charts at different temperatures and we follow the temperature evolution of a
peculiar pair of "zero-mode" Landau levels, which split from the edge of
electron-like and hole-like subbands. Their crossing at critical magnetic field
is a characteristic of inverted band structure in the quantum well. By
measuring the temperature dependence of , we directly extract the critical
temperature , at which the bulk band-gap vanishes and the topological
phase transition occurs. Above this critical temperature, the opening of a
trivial gap is clearly observed.Comment: 5 pages + Supplemental Materials; Phys. Rev. Lett. (accepted
Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can reach THz frequencies for a nanometer size devices. As was predicted by Dyakonov and Shur in 1993, the steady state of the current flow in a gated 2D electron gas can become unstable leading to the emission of an electromagnetic radiation at the plasma wave frequencies. The theory predicted also that the plasma waves can be used for resonant detection of THz electromagnetic radiation. In the present paper we review our recent experiments on THz emission and detection performed on high electron mobility transistors based on different semiconductor structures: InGaAs/GaAlAs, GaAs/GaAlAs, and Si
Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
We report on reflective electro-optic sampling measurements of TeraHertz
emission from nanometer-gate-length InGaAs-based high electron mobility
transistors. The room temperature coherent gate-voltage tunable emission is
demonstrated. We establish that the physical mechanism of the coherent
TeraHertz emission is related to the plasma waves driven by simultaneous
current and optical excitation. A significant shift of the plasma frequency and
the narrowing of the emission with increasing channel's current are observed
and explained as due to the increase of the carriers density and drift
velocity.Comment: 3 figure
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