412 research outputs found
Scrambling and thermalization in a diffusive quantum many-body system
Out-of-time ordered (OTO) correlation functions describe scrambling of
information in correlated quantum matter. They are of particular interest in
incoherent quantum systems lacking well defined quasi-particles. Thus far, it
is largely elusive how OTO correlators spread in incoherent systems with
diffusive transport governed by a few globally conserved quantities. Here, we
study the dynamical response of such a system using high-performance
matrix-product-operator techniques. Specifically, we consider the
non-integrable, one-dimensional Bose-Hubbard model in the incoherent
high-temperature regime. Our system exhibits diffusive dynamics in time-ordered
correlators of globally conserved quantities, whereas OTO correlators display a
ballistic, light-cone spreading of quantum information. The slowest process in
the global thermalization of the system is thus diffusive, yet information
spreading is not inhibited by such slow dynamics. We furthermore develop an
experimentally feasible protocol to overcome some challenges faced by existing
proposals and to probe time-ordered and OTO correlation functions. Our study
opens new avenues for both the theoretical and experimental exploration of
thermalization and information scrambling dynamics.Comment: 7+4 pages, 8+3 figures; streamlined versio
Pressure and temperature driven phase transitions in HgTe quantum wells
We present theoretical investigations of pressure and temperature driven
phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band
\textbf{kp} Hamiltonian we calculate evolution of energy band structure
at different quantum well width with hydrostatic pressure up to 20 kBar and
temperature ranging up 300 K. In particular, we show that in addition to
temperature, tuning of hydrostatic pressure allows to drive transitions between
semimetal, band insulator and topological insulator phases. Our realistic band
structure calculations reveal that the band inversion under hydrostatic
pressure and temperature may be accompanied by non-local overlapping between
conduction and valence bands. The pressure and temperature phase diagrams are
presented.Comment: 9 pages, 8 figures + Supplemental material (5 pages
Submerged entry nozzle clogging during continuous casting of Al-killed steel
Nozzle clogging is a common problem in the production of continuously cast Al-killed steels. Clogging occurs when there are solid inclusions in molten steel at casting temperatures. SENs (Submerged entry nozzles) from continuous casting of Al-killed low alloy steel grades with increased content of sulfur (0,020 to 0,035 % S) were examined. The examinations revealed that the deposits are mainly alumina based, with spinel and sulfur inclusions and some entrapped steel melt. It was concluded that the process of clogging begins when the steel melt infiltrates the refractory and removes the protective zirconia surface, thus allowing the adhesion of fine solid aluminates, which form the deposits
Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum
Motivated by the recent observation of the metal-insulator transition in
Si-MOSFETs we consider the quantum interference correction to the conductivity
in the presence of the Rashba spin splitting. For a small splitting, a
crossover from the localizing to antilocalizing regime is obtained. The
symplectic correction is revealed in the limit of a large separation between
the chiral branches. The relevance of the chiral splitting for the 2D electron
gas in Si-MOSFETs is discussed.Comment: 7 pages, REVTeX. Mistake corrected; in the limit of a large chiral
splitting the correction to the conductivity does not vanish but approaches
the symplectic valu
High intensity study of THz detectors based on field effect transistors
Terahertz power dependence of the photoresponse of field effect transistors,
operating at frequencies from 0.1 to 3 THz for incident radiation power density
up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect
transistors and InGaAs high electron mobility transistors. The photoresponse
increased linearly with increasing radiation power up to kW/cm^2 range. The
saturation of the photoresponse was observed for all investigated field effect
transistors for intensities above several kW/cm^2. The observed signal
saturation is explained by drain photocurrent saturation similar to saturation
in direct currents output characteristics. The theoretical model of terahertz
field effect transistor photoresponse at high intensity was developed. The
model explains quantitatively experimental data both in linear and nonlinear
(saturation) range. Our results show that dynamic range of field effect
transistors is very high and can extend over more than six orderd of magnitudes
of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2)
Plasmons and Coulomb drag in Dirac/Schroedinger hybrid electron systems
We show that the plasmon spectrum of an ordinary two-dimensional electron gas
(2DEG) hosted in a GaAs heterostructure is significantly modified when a
graphene sheet is placed on the surface of the semiconductor in close proximity
to the 2DEG. Long-range Coulomb interactions between massive electrons and
massless Dirac fermions lead to a new set of optical and acoustic intra-subband
plasmons. Here we compute the dispersion of these coupled modes within the
Random Phase Approximation, providing analytical expressions in the
long-wavelength limit that shed light on their dependence on the Dirac velocity
and Dirac-fermion density. We also evaluate the resistivity in a Coulomb-drag
transport setup. These Dirac/Schroedinger hybrid electron systems are
experimentally feasible and open new research opportunities for fundamental
studies of electron-electron interaction effects in two spatial dimensions.Comment: 7 pages, 4 figure
Analysis of negative magnetoresistance. Statistics of closed paths. II. Experiment
It is shown that a new kind of information can be extracted from the Fourier
transform of negative magnetoresistance in 2D semiconductor structures. The
procedure proposed provides the information on the area distribution function
of closed paths and on the area dependence of the average length of closed
paths. Based on this line of attack the method of analysis of the negative
magnetoresistance is suggested. The method has been used to process the
experimental data on negative magnetoresistance in 2D structures with different
relations between the momentum and phase relaxation times. It is demonstrated
this fact leads to distinction in the area dependence of the average length of
closed paths.Comment: 5 pages, 5 figures, to be published in Phys.Rev.
Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
We report on the observation of a radiation helicity sensitive photocurrent
excited by terahertz (THz) radiation in dual-grating-gate (DGG)
InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a
circular polarization the current measured between source and drain contacts
changes its sign with the inversion of the radiation helicity. For elliptically
polarized radiation the total current is described by superposition of the
Stokes parameters with different weights. Moreover, by variation of gate
voltages applied to individual gratings the photocurrent can be defined either
by the Stokes parameter defining the radiation helicity or those for linear
polarization. We show that artificial non-centrosymmetric microperiodic
structures with a two-dimensional electron system excited by THz radiation
exhibit a dc photocurrent caused by the combined action of a spatially periodic
in-plane potential and spatially modulated light. The results provide a proof
of principle for the application of DGG HEMT for all-electric detection of the
radiation's polarization state.Comment: 7 pages, 4 figure
Temperature-induced topological phase transition in HgTe quantum wells
We report a direct observation of temperature-induced topological phase
transition between trivial and topological insulator in HgTe quantum well. By
using a gated Hall bar device, we measure and represent Landau levels in fan
charts at different temperatures and we follow the temperature evolution of a
peculiar pair of "zero-mode" Landau levels, which split from the edge of
electron-like and hole-like subbands. Their crossing at critical magnetic field
is a characteristic of inverted band structure in the quantum well. By
measuring the temperature dependence of , we directly extract the critical
temperature , at which the bulk band-gap vanishes and the topological
phase transition occurs. Above this critical temperature, the opening of a
trivial gap is clearly observed.Comment: 5 pages + Supplemental Materials; Phys. Rev. Lett. (accepted
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