Macroscopic quantum effects of electromagnetic induction in silicon nanostructures

At room temperature, a macroscopic quantum galvanomagnetic effect of Faraday electromagnetic induction was demonstrated under conditions of the capture of single magnetic flux quanta in the edge channels, confined by chains of negative-U centers, in a silicon nanostructure heavily doped with boron, prepared in Hall geometry on an n-type Si (100) substrate. It is shown that this effect leads to the appearance of an induction current when only a constant magnetic field is applied in the absence of an externally applied voltage or a stabilized current.Comment: 14 pages, 5 figure

Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor delta-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane

Superconductivity in silicon nanostructures

We present the findings of the superconductivity observed in the silicon nanostructures prepared by short time diffusion of boron on the n-type Si(100) surface. These Si-based nanostructures represent the p-type ultra-narrow self-assembled silicon quantum wells, 2nm, confined by the delta - barriers heavily doped with boron, 3nm. The EPR and the thermo-emf studies show that the delta - barriers appear to consist of the trigonal dipole centres, which are caused by the negative-U reconstruction of the shallow boron acceptors. Using the CV and thermo-emf techniques, the transport of two-dimensional holes inside SQW is demonstrated to be accompanied by single-hole tunneling through these negative-U centres that results in the superconductivity of the delta - barriers. The values of the correlation gaps obtained from these measurements are in a good agreement with the data derived from the temperature and magnetic field dependencies of the magnetic susceptibility, which reveal a strong diamagnetism and additionally identify the superconductor gap value.Comment: 4 pages, 6 figures, presented at the 4th International Conference on Vortex Matter in Superconductors, Crete, Greece, September 3-9, 200

Spin interference in silicon one-dimensional rings

We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the gate voltage that are perpendicular to the plane of the double-slit ring. Firstly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted in the one of the arms of the double-slit ring are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations. Secondly, the amplitude and phase sensitivity of the 0.7 feature of the hole quantum conductance staircase revealed by the quantum point contact inserted are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction.Comment: 2 pages, 2 figures, presented at the 5th International Conference on Strongly Correlated Electron Systems, SCES'05, Vienna, Austria, 26-30 July, 200

Spin interference in silicon three-terminal one-dimensional rings

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double-slit ring. Firstly, the amplitude and phase sensitivity of the 0.7(2e^2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction. Secondly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations.Comment: 8 pages, 5 figure

Fractional quantum conductance staircase of edge hole channels in silicon quantum wells

We present the findings for the fractional quantum conductance of holes that is caused by the edge channels in the silicon nanosandwich prepared within frameworks of the Hall geometry. This nanosandwich represents the ultra-narrow p-type silicon quantum well (Si-QW), 2 nm, confined by the {\delta}-barriers heavily doped with boron on the n-type Si (100) surface. The edge channels in the Si-QW plane are revealed by measuring the longitudinal quantum conductance staircase, Gxx, as a function of the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional form of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.Comment: 7 pages and 4 figure