Low energy indium or gallium ion implantations to SiO2 thin films for development of novel catalysts

It has been demonstrated that indium (In) implanted silicon dioxide (SiO thin films catalyze a reaction of benzhydrol with acetylacetone. In this study, it is found that the threshold In ion incident energy for manifestation of the catalytic effect exists between 400 and 470 eV. Furthermore, a technique to implant gallium (Ga) to SiOfilms has been developed with highly controlled doses and injection energies for the formation of thin films that promote Ga catalysts. The efficiency of catalytic reactions by Ga implanted SiOthin films is yet to be improved. Unlike In implanted SiO2, the reason why no significant reaction was observed in the case of Ga implanted SiOfilms examined in this study seems that the Ga ion energy was so low that deposited surface Ga atoms should lack interactions with Si atoms for the manifestation of catalytic reaction. © 2014 The Surface Science Society of Japan.Satoru Yoshimura, Masato Kiuchi, Yoshihiro Nishimoto, Makoto Yasuda, Akio Baba, Satoshi Hamaguchi, Low Energy Indium or Gallium Ion Implantations to SiO2 Thin Films for Development of Novel Catalysts, e-Journal of Surface Science and Nanotechnology, 2014, Volume 12, Pages 197-202, Released April 26, 2014, Online ISSN 1348-0391, https://doi.org/10.1380/ejssnt.2014.197, https://www.jstage.jst.go.jp/article/ejssnt/12/0/12_197/_article/-char/e

Stability of hexafluoroacetylacetone molecules on metallic and oxidized nickel surfaces in atomic-layer-etching processes

Abdulrahman H. Basher, Marjan Krstić, Takae Takeuchi, Michiro Isobe, Tomoko Ito, Masato Kiuchi, Kazuhiro Karahashi, Wolfgang Wenzel, and Satoshi Hamaguchi, Journal of Vacuum Science & Technology A 38:2, (2020); licensed under a Creative Commons Attribution (CC BY) license

Offshore-origin warm water inflows toward Totten Ice Shelf, East Antarctica

The Tenth Symposium on Polar Science/Ordinary sessions: [OM] Polar Meteorology and Glaciology, Thu. 5 Dec. / 2F Auditorium , National Institute of Polar Researc