Diffusion of degenerate minority carrier in a p-type semiconductor

We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2  ×  1016 to 6  ×  1017 cm−3. After the first few picoseconds, the grating decays primarily due to ambipolar diffusion. While, at low density, we observe a regime in which the ambipolar diffusion is electron-dominated and increases rapidly with n, it appears to saturate at 34 cm2/s at high n. We present a simple calculation that reproduces the main results of our measurements as well as of previously published measurements that had shown diffusion to be a flat or decreasing function of n. By accounting for effect of density on charge susceptibility, we show that, in p-type semiconductors, the regime we observe of increasing ambipolar diffusion is unique to heavy doping and low temperature, where both the holes and electrons are degenerate; in this regime, the electronic and ambipolar diffusion are nearly equal. The saturation is identified as a crossover to ambipolar diffusion dominated by the majority carriers, the holes. At short times, the transient-grating signal rises gradually. This rise reveals cooling of hot electrons and, at high photocarrier density, allows us to measure ambipolar diffusion of 110 cm2/s in the hot-carrier regime

Rapid diffusion of electrons in GaMnAs

We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs.Comment: 5 pages, 3 figures. Differs from the previous version in incorporating additional data and changes made during the review process. Differs from the published version in including section headings and in omitting AIP copy-edits. No substantial differences in scientific conclusions from either versio