Graphene formation on SiC substrates

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports.Comment: European Conference on Silicon Carbide and Related Materials 2008 (ECSCRM '08), 4 pages, 4 figure

Foxh1/Nodal Defines Context-Specific Direct Maternal Wnt/β-Catenin Target Gene Regulation in Early Development

We thank Jessica Cheung (UC Irvine) and Yvonne Turnbull (University of Aberdeen) for technical and management support; Gert Jan Veenstra (Radboud University, Nijmegen) for discussion; and Adam Lynch and Victor Velecela (University of Aberdeen), for comments on the manuscript. We also thank Professor Masanori Taira (University of Tokyo, currently Chuo University) and Dr Norihiro Sudou (Nara Institute of Science and Technology, currently Tokyo Women's Medical University) for the siamois antibody; and Professor Dan Kessler (University of Pennsylvania) for siamois constructs. This research was supported by the Biotechnology and Biological Sciences Research Council (BBSRC) in the United Kingdom (BB/M001695/1) and by NIH in the United States (NIH GM126395). SH additionally acknowledges personal funding support as a Royal Society/Leverhulme Trust Senior Research Fellow (SRF\R1\191017).Peer reviewedPublisher PD

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon.Comment: 215th Meeting of the Electrochemical Society (ECS 215), 14 pages, 6 figure

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face.Comment: Accepted for publication in Applied Physics Letters, 10 pages, 2 figure

THE EFFECT OF THERMAL CONDITIONS ON PROCESS DEFECTS IN ELECTRON BEAM DIRECTED ENERGY DEPOSITION

Observing process defects at size scales and with sufficient confidence relevant to qualification efforts has not yet been achieved in metal AM, so non-destructive testing (NDT) techniques are used to detect porosity within material deposited. NDT costs can be significant and may not achieve targeted resolution due to geometry and material limitations. In this work, in-process monitoring of Electron Beam Directed Energy Deposition (EB-DED) is enhanced to include three thermal history conditions; inter-pass, melt pool superheat and trailing bead temperatures. Quality scenarios are applied to simulate various process conditions during EB-DED at three different thermal conditions within production relevant use cases and resultant process defects are characterized via high throughput computed tomography. Defects are spatially and temporally registered to process conditions observed during EB-DED and statistically mapped to thermal scenarios. Thermal condition has a strong influence on the quantity of observed process defects, with lower interpass temperature resulting in a larger number of defects.Mechanical Engineerin

Sox17 and ß-catenin co-occupy Wnt-responsive enhancers to govern the endoderm gene regulatory network

© The Author(s), 2020. This article is distributed under the terms of the Creative Commons Attribution License. The definitive version was published in Mukherjee, S., Chaturvedi, P., Rankin, S. A., Fish, M. B., Wlizla, M., Paraiso, K. D., MacDonald, M., Chen, X., Weirauch, M. T., Blitz, I. L., Cho, K. W. Y., & Zorn, A. M. Sox17 and ß-catenin co-occupy Wnt-responsive enhancers to govern the endoderm gene regulatory network. Elife, 9, (2020): e58029, doi:10.7554/eLife.58029.Lineage specification is governed by gene regulatory networks (GRNs) that integrate the activity of signaling effectors and transcription factors (TFs) on enhancers. Sox17 is a key transcriptional regulator of definitive endoderm development, and yet, its genomic targets remain largely uncharacterized. Here, using genomic approaches and epistasis experiments, we define the Sox17-governed endoderm GRN in Xenopus gastrulae. We show that Sox17 functionally interacts with the canonical Wnt pathway to specify and pattern the endoderm while repressing alternative mesectoderm fates. Sox17 and β-catenin co-occupy hundreds of key enhancers. In some cases, Sox17 and β-catenin synergistically activate transcription apparently independent of Tcfs, whereas on other enhancers, Sox17 represses β-catenin/Tcf-mediated transcription to spatially restrict gene expression domains. Our findings establish Sox17 as a tissue-specific modifier of Wnt responses and point to a novel paradigm where genomic specificity of Wnt/β-catenin transcription is determined through functional interactions between lineage-specific Sox TFs and β-catenin/Tcf transcriptional complexes. Given the ubiquitous nature of Sox TFs and Wnt signaling, this mechanism has important implications across a diverse range of developmental and disease contexts.Eunice Kennedy Shriver National Institute of Child Health and Human Development (HD073179) Ken WY Cho Aaron M Zorn National Institute of Diabetes and Digestive and Kidney Diseases (P30DK078392) Aaron M Zorn Eunice Kennedy Shriver National Institute of Child Health and Human Development (P01HD093363) Aaron M Zor

Type-2 innate lymphoid cells control the development of atherosclerosis in mice.

Type-2 innate lymphoid cells (ILC2) are a prominent source of type II cytokines and are found constitutively at mucosal surfaces and in visceral adipose tissue. Despite their role in limiting obesity, how ILC2s respond to high fat feeding is poorly understood, and their direct influence on the development of atherosclerosis has not been explored. Here, we show that ILC2 are present in para-aortic adipose tissue and lymph nodes and display an inflammatory-like phenotype atypical of adipose resident ILC2. High fat feeding alters both the number of ILC2 and their type II cytokine production. Selective genetic ablation of ILC2 in Ldlr-/- mice accelerates the development of atherosclerosis, which is prevented by reconstitution with wild type but not Il5-/- or Il13-/- ILC2. We conclude that ILC2 represent a major innate cell source of IL-5 and IL-13 required for mounting atheroprotective immunity, which can be altered by high fat diet

Telavancin versus Vancomycin for Hospital-Acquired Pneumonia due to Gram-positive Pathogens

The results from two methodologically identical double-blind studies indicate that telavancin is noninferior to vancomycin based on clinical response in the treatment of hospital-acquired pneumonia due to Gram-positive pathogens