Magnetic-field effects on the in-plane electrical resistivity in the single-crystal La2−x_{2-x}Bax_xCuO4_4 and La1.6−x_{1.6-x}Nd0.4_{0.4}Srx_xCuO4_4 around x=1/8x=1/8: Relating to the field-induced stripe order

Temperature dependence of the in-plane electrical resistivity, $\rho_{\rm ab}$, in various magnetic fields has been measured in the single-crystal La$_{2-x}$Ba$_x$CuO$_4$ with $x=0.08$, 0.10, 0.11 and La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ with $x=0.12$. It has been found that the superconducting transition curve shows a so-called fan-shape broadening in magnetic fields for $x=0.08$, while it shifts toward the low-temperature side in parallel with increasing field for $x=0.11$ and 0.12 where the charge-spin stripe order is formed at low temperatures. As for $x=0.10$, the broadening is observed in low fields and it changes to the parallel shift in high fields above 9 T. Moreover, the normal-state value of $\rho_{\rm ab}$ at low temperatures markedly increases with increasing field up to 15 T. It is possible that these pronounced features of $x=0.10$ are understood in terms of the magnetic-field-induced stabilization of the stripe order suggested from the neutron-scattering measurements in the La-214 system. The $\rho_{\rm ab}$ in the normal state at low temperatures has been found to be proportional to ln(1/$T$) for $x=0.10$, 0.11 and 0.12. The ln(1/$T$) dependence of $\rho_{\rm ab}$ is robust even in the stripe-ordered state.Comment: 6 pages, 4 figures, ver. 2 has been accepted for publication in Phys. Rev.

Effect of layer charge on chemical and physical properties of synthetic K-fluorine micas

The original publication is available at www.springerlink.com.ArticleJOURNAL OF MATERIALS SCIENCE. 40(21): 5597-5602 (2005)journal articl

Out-of-plane dielectric constant and insulator-superconductor transition in Bi_2Sr_2Dy_{1-x}Er_xCu_2O_8 single crystals

The out-of-plane dielectric constant of the parent insulator of the high-temperature superconductor Bi_2Sr_2(Dy,Er)Cu_2O_8 was measured and analysed from 80 to 300 K in the frequency range of 10^6-10^9 Hz. All the samples were found to show a fairly large value of 10-60, implying some kind of charge inhomogeneity in the CuO_2 plane. Considering that the superconducting sample Bi_2Sr_2(Ca,Pr)Cu_2O_8 also shows a similar dielectric constant, the charge inhomogeneity plays an important role in the insulator-superconductor transition.Comment: RevTex4 format, 5 pages, 3 figures, submitted to J. Phys. Condens. Ma

Low-energy electron scattering by CH_3F, CH_2F_2, CHF_3, and CF_4

We present measured and calculated differential cross sections, as well as calculated integral cross sections, for elastic electron collisions with CH_3F, CH_2F_2, CHF_3, and CF_4. The calculated cross sections were obtained with the Schwinger multichannel method, and a Born-closure procedure was used to improve the differential cross sections for polar systems. Polarization effects were found to be relevant even for systems with moderately large permanent dipole moments, such as CH_3F and CHF_3. In general, there is good agreement between theory and experiment

Reconstructing Bohr's Reply to EPR in Algebraic Quantum Theory

Halvorson and Clifton have given a mathematical reconstruction of Bohr's reply to Einstein, Podolsky and Rosen (EPR), and argued that this reply is dictated by the two requirements of classicality and objectivity for the description of experimental data, by proving consistency between their objectivity requirement and a contextualized version of the EPR reality criterion which had been introduced by Howard in his earlier analysis of Bohr's reply. In the present paper, we generalize the above consistency theorem, with a rather elementary proof, to a general formulation of EPR states applicable to both non-relativistic quantum mechanics and algebraic quantum field theory; and we clarify the elements of reality in EPR states in terms of Bohr's requirements of classicality and objectivity, in a general formulation of algebraic quantum theory.Comment: 13 pages, Late

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

The formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center