5,531 research outputs found
Highly-stretchable and water impermeable thermally-grown silicon dioxide thin film with wavy structures
To ensure chemical stability and long-term operation, organic electronic devices require encapsulation layer with low water vapor transmittance rate because organic components in organic electronic device are vulnerable to humidity. Encapsulation of commercialized OLEDs are rigid glass and epoxy resin, which are not suitable for flexible devices requiring high flexibility. TFE (thin-film encapsulation) technique has been studied for flexible device encapsulation. Amorphous materials are selected for TFE materials because they are dense and transparent and do not have fast diffusion paths like grain boundary. Thermally-grown silicon dioxide, oxidized from single crystal silicon substrate at high temperature, has ultra-low water vapor transmittance rate due to high density without pinholes and defects. However, the thermally-grown silicon dioxide thin films have a low elastic limit (\u3c 1%) and show brittle fracture alike typical amorphous materials. For that reasons, it is necessary to improve the mechanical properties of the thermally-grown silicon dioxide thin film for flexible encapsulation.
In this study, we tried to improve the stretchability by applying the wavy structure to thermally-grown silicon dioxide and developed the wavy structure texturing of single crystal silicon substrate by using photo-lithography and various etching process. we fabricated a highly-stretchable wavy thermally-grown silicon dioxide TFE by oxidizing wavy textured crystalline silicon substrate. Also, we carried out cyclic tensile test of submicron scale wavy thermally-grown silicon dioxide films and defined the elastic limit, and the stretchability. And then, we analyze the enhancement of stretchability by finite element analysis on the wavy and flat thermally-grown silicon dioxide TFE and discussed about the correlation between the improvement of stretchability and wavy structure
Quantum simulator for the Hubbard model with long-range Coulomb interactions using surface acoustic waves
A practical experimental scheme for a quantum simulator of strongly
correlated electrons is proposed. Our scheme employs electrons confined in a
two dimensional electron gas in a GaAs/AlGaAs heterojunction. Two surface
acoustic waves are then induced in the GaAs substrate, which create a two
dimensional ``egg-carton'' potential. The dynamics of the electrons in this
potential is described by a Hubbard model with long-range Coulomb interactions.
The state of the electrons in this system can be probed via its conductance and
noise properties. This allows the identification of a metallic or insulating
state. Numerical estimates for the parameters appearing in the effective
Hubbard model are calculated using the proposed experimental system. These
calculations suggest that observations of quantum phase transition phenomena of
the electrons in the potential array are within experimental reach.Comment: 5 pages, 5 figure
Stochastic Formation of Polariton Condensates in Two Degenerate Orbital States
We explore the exciton-polariton condensation in the two degenerate orbital
states. In the honeycomb lattice potential, at the third band we have two
degenerate vortex-antivortex lattice states at the inequivalent K and
K'-points. We have observed energetically degenerate condensates within the
linewidth ~ 0.3 meV, and directly measured the vortex-antivortex lattice phase
order of the order parameter. We have also observed the intensity
anticorrelation between polariton condensates at the K- and K'-points. We
relate this intensity anticorrelation to the dynamical feature of polariton
condensates induced by the stochastic relaxation from the common particle
reservoir.Comment: 5 pages, 4 figure
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