Substrate-tuning of correlated spin-orbit oxides revealed by optical conductivity calculations

We have systematically investigated substrate-strain effects on the electronic structures of two representative Sr-iridates, a correlated-insulator Sr2IrO4 and a metal SrIrO3. Optical conductivities obtained by the ab initio electronic structure calculations reveal that the tensile strain shifts the optical peak positions to higher energy side with altered intensities, suggesting the enhancement of the electronic correlation and spin-orbit coupling (SOC) strength in Sr-iridates. The response of the electronic structure upon tensile strain is found to be highly correlated with the direction of magnetic moment, the octahedral connectivity, and the SOC strength, which cooperatively determine the robustness of J(eff) = 1/2 ground states. Optical responses are analyzed also with microscopic model calculation and compared with corresponding experiments. In the case of SrIrO3, the evolution of the electronic structure near the Fermi level shows high tunability of hole bands, as suggested by previous experiments.117Ysciescopu

Resistive evolution of the magnetized Kelvin-Helmholtz instability

It is found from the resistive MHD simulation that the most effective momentum transport due to Kelvin-Helmholtz instability is obtained in the small range of magnetic-field intensity when the highly sheared field lines undergo magnetic reconnection in the late stage of the evolution

Kinetic stabilization of Fe film on (4 by 2)-GaAs(100)

We grow Fe film on (4 by 2)-GaAs(100) at low temperature, (~ 130 K) and study their chemical structure by photoelectron spectroscopy using synchrotron radiation. We observe the effective suppression of As segregation and remarkable reduction of alloy formation near the interface between Fe and substrate. Hence, this should be a way to grow virtually pristine Fe film on GaAs(100). Further, the Fe film is found stable against As segregation even after warmed up to room temperature. There only forms very thin, ~ 8 angstrom thick interface alloy. It is speculated that the interface alloy forms via surface diffusion mediated by interface defects formed during the low temperature growth of the Fe film. Further out-diffusion of both Ga and As are suppressed because it should then proceed via inefficient bulk diffusion.Comment: 4 figure

A Tractable Model of the LTE Access Reservation Procedure for Machine-Type Communications

A canonical scenario in Machine-Type Communications (MTC) is the one featuring a large number of devices, each of them with sporadic traffic. Hence, the number of served devices in a single LTE cell is not determined by the available aggregate rate, but rather by the limitations of the LTE access reservation protocol. Specifically, the limited number of contention preambles and the limited amount of uplink grants per random access response are crucial to consider when dimensioning LTE networks for MTC. We propose a low-complexity model of LTE's access reservation protocol that encompasses these two limitations and allows us to evaluate the outage probability at click-speed. The model is based chiefly on closed-form expressions, except for the part with the feedback impact of retransmissions, which is determined by solving a fixed point equation. Our model overcomes the incompleteness of the existing models that are focusing solely on the preamble collisions. A comparison with the simulated LTE access reservation procedure that follows the 3GPP specifications, confirms that our model provides an accurate estimation of the system outage event and the number of supported MTC devices.Comment: Submitted, Revised, to be presented in IEEE Globecom 2015; v3: fixed error in eq. (4

Nonvolatile memories using deep traps formed in HfO₂ by Nb ion implantation

We report nonvolatile memories (NVMs) based on deep-energy trap levels formed in HfO₂ by metal ion implantation. A comparison of Nb- and Ta-implanted samples shows that suitable charge-trapping centers are formed in Nb-implanted samples, but not in Ta-implanted samples. This is consistent with density-functional theory calculations which predict that only Nb will form deep-energy levels in the bandgap of HfO₂. Photocurrent spectroscopy exhibits characteristics consistent with one of the trap levels predicted in these calculations. Nb-implanted samples showing memory windows in capacitance–voltage (V) curves always exhibit current (I) peaks in I–V curves, indicating that NVM effects result from deep traps in HfO₂. In contrast, Ta-implanted samples show dielectric breakdowns during the I–V sweeps between 5 and 11 V, consistent with the fact that no trap levels are present. For a sample implanted with a fluence of 10¹³Nb cm⁻², the charge losses after 10⁴ s are ∼9.8 and ∼25.5% at room temperature (RT) and 85°C, respectively, and the expected charge loss after 10 years is ∼34% at RT, very promising for commercial NVMs