Resistive Switching Characteristics of Electrochemically Anodized Sub-stoichiometric Ti6O Phase

We have developed Ti6O thin film using the electrochemical anodization approach for resistive switching (RS) application. The effect of anodization time (1 h, 2 h and 3 h) on the RS/memristive properties was investigated. The structural analysis was carried out by using the XRD technique, which reveals that the formation of the sub-stoichiometric Ti6O phase. The scanning electron microscopy image reveals that the thin film has compact and porous surface morphology. The electrical results clearly show bipolar RS in Al/Ti6O/Ti device. The boost in the RS properties was achieved by increasing the anodization time. The basic memristive properties were calculated using experimental I-V data. The Schottky, Hopping and Ohmic charge transport mechanisms contribute to the conduction, whereas the filamentary effect controls the RS process of the Al/Ti6O/Ti memristive devices