37 research outputs found
Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking
We construct a simple phenomenological diffuse-interface model for
composition-induced nanopatterning during ion sputtering of alloys. In
simulations, this model reproduces without difficulties the high-aspect ratio
structures and tilted pillars observed in experiments. We investigate the time
evolution of the pillar height, both by simulations and by {\it in situ}
ellipsometry. The analysis of the simulation results yields a good
understanding of the transitions between different growth regimes and supports
the role of segregation in the pattern-formation process.Comment: 10 pages, 3 figures; minor revisions with respect to first version;
figures nicened; journal ref. adde
Optical properties of silicon carbide polytypes below and around bandgap
The optical properties of SiC polytypes are discussed with relation to the structure of SiC. The main part of the paper review the detailed measurements of the uniaxial dielectric function below and around the minimum band gap, using phase-modulated spectroscopic ellipsometry, polarised light transmission measurements or crossed polariser variable angle of incidence interferometry. In particular, the oscillations in the recorded ellipsometric intensities, due to interference between the ordinary and extraordinary modes, specific to thick uniaxial wafers, are used to accurately measure the below band gap dielectric difference. It is focused on the differences in optical properties among the polytypes, in order to investigate SE and closely related techniques as a candidate for bulk-material wafer inspection and characterisation. (37 refs)
Breakdown and field emission conditioning of Cu, Mo and W
The ultra-high-vacuum electrical breakdown characteristics of copper, molybdenum and tungsten have been explored in a setup based on a capacitor discharge. Upon repeated sparking, tungsten and molybdenum showed improvement of the maximum applicable field before breakdown (conditioning) in contrast to copper, which experienced alternate improvement and degrading. After conditioning, tungsten withstood the highest applied field followed by molybdenum and copper. This behaviour was correlated with that of the field enhancement factor extracted from measurements of the field emission current. These results are compared with the tests performed on 30 GHz test accelerating structures for the future Compact Linear Collider
Breakdown resistance of refractory metals compared to copper
The behaviour of Mo, W and Cu with respect to electrical breakdown in ultra high vacuum has been investigated by means of a capacitor discharge method. The maximum stable electric field without breakdown and the field enhancement factor, beta have been measured between electrodes of the same material in a sphere/plane geometry for anode and cathode, respectively. The maximum stable field increases as a function of the number of breakdown events for W and Mo. In contrast, no systematic increase is observed for Cu. The highest values obtained are typically 500 MV/m for W, 350 MV/m for Mo and only 180 MV/m for Cu. This conditioning, found for the refractory metals, corresponds to a simultaneous decrease of beta and is therefore related to the field emission properties of the surface and their modification upon sparking. Accordingly, high beta values and no applicable field increase occur for Cu even after repeated breakdown. The results are compared with RF breakdown experiments [1] performed on prototype 30 GHz accelerating structures for the CLIC accelerator
Real-time control by multiwavelength ellipsometry of plasma-deposited multilayers on glass by use of an incoherent-reflection model
International audienc
Fast near infra-red ferroelectric liquid crystal based Mueller matrix system for imaging and spectroscopy
The science and optical engineering of imaging Mueller Matrix Ellipsometry
(MME) and Spectroscopic MME is currently being revitalized based on an efficient
optimal design method, and through the use of the so-called Eig envalue Calibration Technique (ECT). Through the ECT one may efficiently measure the details of the polarization state generator (PSG) matrix, and the polarization
state analyzer (PSA) matrix, and hence avoid modeling of any unknown polarizing
components in the system, and in particular the exact response of complex
polarizing elements such as liquid crystal retarders. We here start up with
presenting a detailed an alysis of the dynamic response of a near infrared
Ferroelectric Liquid Crystal based Mueller matrix ellipsometer (NIR FLC- MME)
[1] . A time dependent simulation model, using the measured time response
of the individual FLCs, is used to describe the measured temporal response.
Furthermore, the impulse response of the detector and the pre-amplifier is
characterized and in cluded in the simulation model. The measured time
dependent intensity response of the MME is well explained by simulations. A FLC
based NIRMME system is here shown to be able to operate accurately at the
maximum speed of approximately 16 ms per Mueller matrix measurement (steady
state response). We demonstrate here time dependent Mueller Matrix
measurements of a dynamically changing sample, with even down to 8 ms
sampling time of each complete Mueller Matrix (with some loss of accuracy). We secondly briefly present the NIR-FLC- MME imaging system, and show
applications to strain imaging of a crystal subjected to an external pressure.
Furthermore, we present near-infra-red Mueller matrix images and corresponding
polar decomposition images of thin slices of bio-tissue [2]
Real time control of plasma deposited multilayers by multiwavelength ellipsometry
International audienc
Real time control of the growth of silicon alloy multilayers by multiwavelength ellipsometry
International audienc
Determination of small tilt angles of short GaSb nanopillars using UV–visible Mueller matrix ellipsometry
International audienceWe demonstrate that small tilts away from the substrate normal, of short (30-40 nm high) nanopillars, may be detected and modeled by spectroscopic UV-Visible Mueller Matrix Ellipsometry (MME). The pillars were produced by sputtering a GaSb substrate with a low energy unfocused ion beam. It has previously been found that the pillars will point in the direction of the ion flux. For both samples reported here, the ion-incidence was unintentionally tilted away from the substrate normal by 2.8 and 4.8°. The MME measurements were performed using both multiple angles of incidence, and 360° rotation of the incidence plane. Graded uniaxial effective medium models were fitted to the experimental data, and through Euler angle rotations of the dielectric tensor, the tilt angle and the orientation of the pillar direction, were obtained. The UV part of the spectrum enhanced the tilt angle sensitivity down to 0.02-0.05°. A data presentation that enhances the understanding of the symmetry in the crystallographic information obtained from spectroscopic MME is proposed. The off block diagonal Mueller matrix elements are more sensitive to the in-plane anisotropy, whereas for small tilt angles m14 scales approximately with θsin(ϕ)