Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking

Abstract

We construct a simple phenomenological diffuse-interface model for composition-induced nanopatterning during ion sputtering of alloys. In simulations, this model reproduces without difficulties the high-aspect ratio structures and tilted pillars observed in experiments. We investigate the time evolution of the pillar height, both by simulations and by {\it in situ} ellipsometry. The analysis of the simulation results yields a good understanding of the transitions between different growth regimes and supports the role of segregation in the pattern-formation process.Comment: 10 pages, 3 figures; minor revisions with respect to first version; figures nicened; journal ref. adde