Peculiarities of x-ray fluorescent definition of ion-implanted Fe in Si single crystals

The technique of definition of iron concentration in a surface layer of Si(100) is developed by use of spectrometer Spectroscan-U. The measurements of intensity of X-ray fluorescent line FeKα as a function of turn of initial crystal Si(100) in an azimuthal plane are executed. The results of analysis of the diffraction maxima are used for numerical modelling of angular intensity dependencies obtained for Si implanted by Fe. The experimental calibration equations allowing to define Fe concentration on the parameters of azimuthal angular intensity dependence of the analytical line are obtained. The behaviour of X-ray energy spectrum of the initial Si in the range of wave lengths 0.19-0.20 nm depending on an azimuthal angle is considered

Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon

The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a possible approach to the design of silicon-based light-emitting structures in the near infrared region. Defects were introduced into silicon plates by traditional mechanical polishing. The changes in the defect structure and the impurity composition of damaged silicon layers during thermal annealing (TA) of a crystal were examined using transmission electronic microscopy and x-ray fluorescence. Optical properties of the defects were studied at 77 K using photoluminescence (PL) in the near infrared region. It has been shown that the defects generated by mechanical polishing transform into dislocations and dislocation loops and that SiO2 precipitates also form as a result of annealing at temperatures of 850 to 1000°C. Depending on the annealing temperature, either oxide precipitates or dislocations decorated by copper atoms, which are gettered from the crystal bulk, make the predominant contribution to PL spectra. © 2005 Pleiades Publishing, Inc

Peculiarities of x-ray fluorescent definition of ion-implanted Fe in Si single crystals

The technique of definition of iron concentration in a surface layer of Si(100) is developed by use of spectrometer Spectroscan-U. The measurements of intensity of X-ray fluorescent line FeKα as a function of turn of initial crystal Si(100) in an azimuthal plane are executed. The results of analysis of the diffraction maxima are used for numerical modelling of angular intensity dependencies obtained for Si implanted by Fe. The experimental calibration equations allowing to define Fe concentration on the parameters of azimuthal angular intensity dependence of the analytical line are obtained. The behaviour of X-ray energy spectrum of the initial Si in the range of wave lengths 0.19-0.20 nm depending on an azimuthal angle is considered

Peculiarities of x-ray fluorescent definition of ion-implanted Fe in Si single crystals

The technique of definition of iron concentration in a surface layer of Si(100) is developed by use of spectrometer Spectroscan-U. The measurements of intensity of X-ray fluorescent line FeKα as a function of turn of initial crystal Si(100) in an azimuthal plane are executed. The results of analysis of the diffraction maxima are used for numerical modelling of angular intensity dependencies obtained for Si implanted by Fe. The experimental calibration equations allowing to define Fe concentration on the parameters of azimuthal angular intensity dependence of the analytical line are obtained. The behaviour of X-ray energy spectrum of the initial Si in the range of wave lengths 0.19-0.20 nm depending on an azimuthal angle is considered

Peculiarities of x-ray fluorescent definition of ion-implanted Fe in Si single crystals

The technique of definition of iron concentration in a surface layer of Si(100) is developed by use of spectrometer Spectroscan-U. The measurements of intensity of X-ray fluorescent line FeKα as a function of turn of initial crystal Si(100) in an azimuthal plane are executed. The results of analysis of the diffraction maxima are used for numerical modelling of angular intensity dependencies obtained for Si implanted by Fe. The experimental calibration equations allowing to define Fe concentration on the parameters of azimuthal angular intensity dependence of the analytical line are obtained. The behaviour of X-ray energy spectrum of the initial Si in the range of wave lengths 0.19-0.20 nm depending on an azimuthal angle is considered

Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon

The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a possible approach to the design of silicon-based light-emitting structures in the near infrared region. Defects were introduced into silicon plates by traditional mechanical polishing. The changes in the defect structure and the impurity composition of damaged silicon layers during thermal annealing (TA) of a crystal were examined using transmission electronic microscopy and x-ray fluorescence. Optical properties of the defects were studied at 77 K using photoluminescence (PL) in the near infrared region. It has been shown that the defects generated by mechanical polishing transform into dislocations and dislocation loops and that SiO2 precipitates also form as a result of annealing at temperatures of 850 to 1000°C. Depending on the annealing temperature, either oxide precipitates or dislocations decorated by copper atoms, which are gettered from the crystal bulk, make the predominant contribution to PL spectra. © 2005 Pleiades Publishing, Inc

Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon

The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a possible approach to the design of silicon-based light-emitting structures in the near infrared region. Defects were introduced into silicon plates by traditional mechanical polishing. The changes in the defect structure and the impurity composition of damaged silicon layers during thermal annealing (TA) of a crystal were examined using transmission electronic microscopy and x-ray fluorescence. Optical properties of the defects were studied at 77 K using photoluminescence (PL) in the near infrared region. It has been shown that the defects generated by mechanical polishing transform into dislocations and dislocation loops and that SiO2 precipitates also form as a result of annealing at temperatures of 850 to 1000°C. Depending on the annealing temperature, either oxide precipitates or dislocations decorated by copper atoms, which are gettered from the crystal bulk, make the predominant contribution to PL spectra. © 2005 Pleiades Publishing, Inc

Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon

The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a possible approach to the design of silicon-based light-emitting structures in the near infrared region. Defects were introduced into silicon plates by traditional mechanical polishing. The changes in the defect structure and the impurity composition of damaged silicon layers during thermal annealing (TA) of a crystal were examined using transmission electronic microscopy and x-ray fluorescence. Optical properties of the defects were studied at 77 K using photoluminescence (PL) in the near infrared region. It has been shown that the defects generated by mechanical polishing transform into dislocations and dislocation loops and that SiO2 precipitates also form as a result of annealing at temperatures of 850 to 1000°C. Depending on the annealing temperature, either oxide precipitates or dislocations decorated by copper atoms, which are gettered from the crystal bulk, make the predominant contribution to PL spectra. © 2005 Pleiades Publishing, Inc