Electrical properties of ZnO:Al thin films fabricated by pulsed laser deposition method

The possibility of the high quality AZO thin films fabrication by the PLD method using the second harmonic of the Q-switched YAG:Nd3+ laser is demonstrated. The investigations of dependence of the AZO thin films properties on the PLD conditions (concentration of Al in the target, buffer gas pressure) have been conducted. The optimum conditions of the ZnO:Al thin films deposition have been defined

Application of laser texturing method for mc-Si solar cells fabrication

The results of the experiments on the “black” mc-Si surface fabrication by the nanosecond pulses of the YAG laser second harmonic and on application of the introduced laser texturing method for the mc-Si solar cells efficiency improvement are represented. The developed version of laser texturing permits producing a low-reflection mc-Si surface with the reflectance of ~3% in the spectral range of 0.3-1.1 μm. The application of the introduced laser texturing method in mc-Si solar cells fabrication makes it possible to increase the short circuit current density and quantum efficiency

PLD creation of Au and Ag plasmonic nanoparticles

The gold and silver plasmonic nanoparticles have been synthesized on the c-sapphire and silica substrates by the pulsed laser deposition method. It has been demonstrated that the variation of the thickness of as-grown gold and silver films permits producing the plasmon nanoparticles with different size and density. It provides the retuning of the frequency of surface plasmon resonance in wide spectral region

Thin films of semiconductors for magneto-operated diodes and memristors

The thin films of VO2, TiO2, InSb:Mn, and the heterostructures on their basis have been produced by the PLD method. The memristive effect has been revealed in the heterostructures of Au/VO2/VO2-x/Au, and Au/TiO2/TiO2-x/Au. The value of x was varied during the structure growth by changing the oxygen pressure. The dependence of the I-V curves of the diode heterostructure p-(InSb:Mn)/n-InSb on the magnetic field orientation both in the plane of the structure and perpendicular to it has been revealed. The diode current in the field 0,15T perpendicular to the diode plane decreased almost by a factor of 9, that is indicative of the effect of giant magnetoresistance of the p-(InSb:Mn)/n-InSb diode.The work is supported by RFBR projects No. 15-07-03580,15-29-01171, 16-29-05385, 16-07-00657, 16-07-00842, as well as projects of ONIT RAS (program code IV.3.3) and PRESIDIUM of the RAS (Code I.III)