Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

Square gate all around MOSFETs are a very promising device structures allowing to continue scaling due to their superior control over the short channel effects. In this work a numerical study of a square structure with single channel is compared to a structure with 4 channels in order to highlight the impact of channels number on the device’s DC parameters (drain current and threshold voltage). Our single channel rectangular GAA MOSFET showed reasonable ratio Ion/Ioff of 104, while our four channels GAA MOSFET showed a value of 103. In addition, a low value of drain induced barrier lowering (DIBL) of 60mV/V was obtained for our single channel GAA and a lower value of with 40mv/v has been obtained for our four channel one. Also, an extrinsic transconductance of 88ms/µm have been obtained for our four channels GAA compared to the single channel that is equal to 7ms/µm

Study and evaluation of electronic transport property for an InAlN based on Monte Carlo

The emergence of the semiconductors III-N with heterojunction structures has made it possible to study a wide range of two-dimensional phenomena. This paper devotes to simulate the characteristics of the InAlN material, taking into ac-count temperature and doping as dependencies of conduction properties and performance using MOCASIM of the Tcad-Silvaco software. For the electronic transport model analyzing, we adopted most of the predominant mechanisms using various scattering effects including: optical phonon scattering, acoustic phonon scattering through deformation potential and piezoelectric potential, ionized impurity scattering, and grain boundary scattering. As expected, the carrier transports in the GaN layer are affected by the spontaneous polarization of the InAlN layer. To interact that, the diffusion of grain boundaries has been switched from the diffusion of ionized impurities by the deposition of InAlN. In order to achieve the most improvement possible for the electron transferring in terms of thickness and alloy composition related to the improvement of super-deposited layers. The confinement of sub-bands in channel quantum well is also taken into account in the computation of electron mobility. In the end, the adopted electron model is improved by including the effects of deep electron traps