Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler

We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of only 1.7 mu m, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70 degrees C is obtained

Demonstration of a novel III-V-on-Si distributed feedback laser

We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback laser type. All structures defining the laser cavity are defined in the silicon. Alasing threshold of 50mA and a side mode suppression ratio higher than 40 dB is achieved

III-V-on-silicon anti-colliding pulse-type mode-locked laser

An anti-colliding pulse-type III–V-on-silicon passively mode-locked laser is presented for the first time based on a III–V-on-silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III–V saturable absorber. Passive mode-locking at 4.83 GHz repetition rate generating 3 ps pulses is demonstrated. The generated fundamental RF tone shows a 1.7 kHz 3 dB linewidth. Over 9 mW waveguide coupled output power is demonstrated

Chalcogenides applied to microring switching

We show that switching a phase-change material between its two bonding states can be used to shift the resonant wavelength of a ring resonator and change its Q-factor and extinction ratio, in a reversible and non-volatile way

Towards a low-power nanophotonic semiconductor amplifier heterogeneously integrated with SOI waveguides

In this paper we propose an optically pumped nanophotonic III-V semiconductor optical amplifier heterogeneously integrated on a silicon-on-insulator waveguide circuit through wafer bonding technology. 10 μ m long adiabatic tapers allow a full power transfer from the silicon waveguide layer to the III-V membrane. Low-power consumption is expected, given the high optical confinement in the 100nm thick III-V membrane waveguide, making it suitable for intra-chip optical interconnect networks. We report on the design and preliminary characterization of this novel type of high-index contrast nanophotonic device