1 research outputs found
Tuning Polarity in WSe<sub>2</sub>/AlScN FeFETs via Contact Engineering
Recent
advancements in ferroelectric field-effect transistors
(FeFETs)
using two-dimensional (2D) semiconductor channels and ferroelectric
Al0.68Sc0.32N (AlScN) allow high-performance
nonvolatile devices with exceptional ON-state currents, large ON/OFF
current ratios, and large memory windows (MW). However, previous studies
have solely focused on n-type FeFETs, leaving a crucial gap in the
development of p-type and ambipolar FeFETs, which are essential for
expanding their applicability to a wide range of circuit-level applications.
Here, we present a comprehensive demonstration of n-type, p-type,
and ambipolar FeFETs on an array scale using AlScN and multilayer/monolayer
WSe2. The dominant injected carrier type is modulated through
contact engineering at the metal–semiconductor junction, resulting
in the realization of all three types of FeFETs. The effect of contact
engineering on the carrier injection is further investigated through
technology-computer-aided design simulations. Moreover, our 2D WSe2/AlScN FeFETs achieve high electron and hole current densities
of ∼20 and ∼10 μA/μm, respectively, with
a high ON/OFF ratio surpassing ∼107 and a large
MW of >6 V (0.14 V/nm)