7 research outputs found

    PULSED AND CW LASER TREATMENTS OF IMPLANTED POLYSILICON SOLAR CELLS

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    Conventional ion implantation and unanalyzed ion bombardment have been used to elaborate the rectifying N+ contact of polycrystalline silicon (Wacker, HEM, CGE) solar cells. Two surface laser annealing in the liquid phase (Nd : YAG laser) and in the solid phase (CO2 laser) regimes have been used. The properties of the solar cells so processed have been investigated. For both doping procedures and both annealing techniques, the cells (conversion) efficiencies under AM1 illumination exceeded 11% for the various polysilicon substrates

    Chapel Organ Restoration 36

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    https://dsc.duq.edu/organ-photos/1035/thumbnail.jp

    PULSED AND CW LASER TREATMENTS OF IMPLANTED POLYSILICON SOLAR CELLS

    No full text
    Les contacts redresseurs N+ de photopiles au silicium polycristallin (Wacker, HEM, CGE) ont été réalisés soit par implantation conventionnelle du dopant (P+) soit par "incrustation" d'ions (implantation sans séparation magnétique PF5). Deux techniques de recuit de surface par faisceau laser en phase liquide (laser Nd : YAG) et en phase solide (laser Co2) ont été employées. Les performances des photopiles ainsi élaborées ont été étudiées. Pour les deux types de dopage et de recuit, le rendement de conversion photovoltaïque des cellules dépasse 11% AM1 pour les matériaux polycristallins utilisés.Conventional ion implantation and unanalyzed ion bombardment have been used to elaborate the rectifying N+ contact of polycrystalline silicon (Wacker, HEM, CGE) solar cells. Two surface laser annealing in the liquid phase (Nd : YAG laser) and in the solid phase (CO2 laser) regimes have been used. The properties of the solar cells so processed have been investigated. For both doping procedures and both annealing techniques, the cells (conversion) efficiencies under AM1 illumination exceeded 11% for the various polysilicon substrates
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