Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction

The electronic and vibrational density of states of a semiconducting carbon nanotube in a crossed junction was investigated by elastic and inelastic scanning tunneling spectroscopy. The strong radial compression of the nanotube at the junction induces local metallization spatially confined to a few nm. The local electronic modifications are correlated with the observed changes in the radial breathing and G-band phonon modes, which react very sensitively to local mechanical deformation. In addition, the experiments reveal the crucial contribution of the image charges to the contact potential at nanotube-metal interfaces

Intercalation of graphene on SiC(0001) via ion-implantation

Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. Our results put forward the ion-beam lithography to nanostructure and functionalize desired graphene chips

Kondo effect of Co adatoms on Ag monolayers on noble metal surfaces

The Kondo temperature $T_K$ of single Co adatoms on monolayers of Ag on Cu and Au(111) is determined using Scanning Tunneling Spectroscopy. $T_K$ of Co on a single monolayer of Ag on either substrate is essentially the same as that of Co on a homogenous Ag(111) crystal. This gives strong evidence that the interaction of surface Kondo impurities with the substrate is very local in nature. By comparing $T_K$ found for Co on Cu, Ag, and Au (111)-surfaces we show that the energy scale of the many-electron Kondo state is insensitive to the properties of surface states and to the energetic position of the projected bulk band edges.Comment: 4 pages, 3 figure

Controlling quantum systems by embedded dynamical decoupling schemes

A dynamical decoupling method is presented which is based on embedding a deterministic decoupling scheme into a stochastic one. This way it is possible to combine the advantages of both methods and to increase the suppression of undesired perturbations of quantum systems significantly even for long interaction times. As a first application the stabilization of a quantum memory is discussed which is perturbed by one-and two-qubit interactions

Quantum Coherence of Image-Potential States

The quantum dynamics of the two-dimensional image-potential states in front of the Cu(100) surface is measured by scanning tunneling microscopy (STM) and spectroscopy (STS). The dispersion relation and the momentum resolved phase-relaxation time of the first image-potential state are determined from the quantum interference patterns in the local density of states (LDOS) at step edges. It is demonstrated that the tip-induced Stark shift does not affect the motion of the electrons parallel to the surface.Comment: Submitted to Phys. Rev. Lett., 4 pages, 4 figures; corrected typos, minor change

Origin of Rashba-splitting in the quantized subbands at Bi2Se3 surface

We study the band structure of the $\text{Bi}_2\text{Se}_3$ topological insulator (111) surface using angle-resolved photoemission spectroscopy. We examine the situation where two sets of quantized subbands exhibiting different Rashba spin-splitting are created via bending of the conduction (CB) and the valence (VB) bands at the surface. While the CB subbands are strongly Rashba spin-split, the VB subbands do not exhibit clear spin-splitting. We find that CB and VB experience similar band bending magnitudes, which means, a spin-splitting discrepancy due to different surface potential gradients can be excluded. On the other hand, by comparing the experimental band structure to first principles LMTO band structure calculations, we find that the strongly spin-orbit coupled Bi 6$p$ orbitals dominate the orbital character of CB, whereas their admixture to VB is rather small. The spin-splitting discrepancy is, therefore, traced back to the difference in spin-orbit coupling between CB and VB in the respective subbands' regions

Ag-coverage-dependent symmetry of the electronic states of the Pt(111)-Ag-Bi interface: The ARPES view of a structural transition

We studied by angle-resolved photoelectron spectroscopy the strain-related structural transition from a pseudomorphic monolayer (ML) to a striped incommensurate phase in an Ag thin film grown on Pt(111). We exploited the surfactant properties of Bi to grow ordered Pt(111)-xMLAg-Bi trilayers with 0 < x < 5 ML, and monitored the dispersion of the Bi-derived interface states to probe the structure of the underlying Ag film. We find that their symmetry changes from threefold to sixfold and back to threefold in the Ag coverage range studied. Together with previous scanning tunneling microscopy and photoelectron diffraction data, these results provide a consistent microscopic description of the coverage-dependent structural transition.Comment: 10 pages, 9 figure

Ultrafast photodoping and effective Fermi-Dirac distribution of the Dirac particles in Bi2Se3

We exploit time- and angle- resolved photoemission spectroscopy to determine the evolution of the out-of-equilibrium electronic structure of the topological insulator Bi2Se. The response of the Fermi-Dirac distribution to ultrashort IR laser pulses has been studied by modelling the dynamics of the hot electrons after optical excitation. We disentangle a large increase of the effective temperature T* from a shift of the chemical potential mu*, which is consequence of the ultrafast photodoping of the conduction band. The relaxation dynamics of T* and mu* are k-independent and these two quantities uniquely define the evolution of the excited charge population. We observe that the energy dependence of the non-equilibrium charge population is solely determined by the analytical form of the effective Fermi-Dirac distribution.Comment: 5 Pages, 3 Figure

Shuttle flight pressure instrumentation: Experience and lessons for the future

Flight data obtained from the Space Transportation System orbiter entries are processed and analyzed to assess the accuracy and performance of the Development Flight Instrumentation (DFI) pressure measurement system. Selected pressure measurements are compared with available wind tunnel and computational data and are further used to perform air data analyses using the Shuttle Entry Air Data System (SEADS) computation technique. The results are compared to air data from other sources. These comparisons isolate and demonstrate the effects of the various limitations of the DFI pressure measurement system. The effects of these limitations on orbiter performance analyses are addressed, and instrumentation modifications are recommended to improve the accuracy of similar fight data systems in the future