<雑録>餘剩價値ノ原理

Within the quest for direct band-gap group IV materials, strain engineering in germanium is one promising route. We present a study of the strain distribution in single, suspended germanium nanowires using nanofocused synchrotron radiation. Evaluating the probed Bragg reflection for different illumination positions along the nanowire length results in corresponding strain components as well as the nanowire's tilting and bending. By using these findings we determined the complete strain state with the help of finite element modelling. The resulting information provides us with the possibility of evaluating the validity of the strain investigations following from Raman scattering experiments which are based on the assumption of purely uniaxial strain

Core-shell nanowires: From the ensemble to single-wire characterization

Recent investigations of core-shell nanowires using synchrotron radiation techniques deduced the average structural parameters of heterostructure core-shell nanowires. Here, we report on first results and discuss the problems arising when measuring such complex nanostructures by using nanofocusing X-ray techniques. InAs/IAsP core-shell nanowires exhibit a certain bending, the origin of which is described using finite element simulations assuming a displacement of the core, and a gradient in the chemical composition of the wire's shell. (C) 2009 Elsevier B.V. All rights reserved

X-ray diffraction strain analysis of a single axial InAs1-xPx nanowire segment.

The spatial strain distribution in and around a single axial InAs1-xPx hetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-segment's dimensions affect the strain in its core region and in the region close to the nanowire's side facets. Moreover, ensemble-averaging high-resolution diffraction experiments were used to determine statistical information on the distribution of wurtzite and zinc-blende crystal polytypes in the nanowires

Strain distribution in single, suspended germanium nanowires studied using nanofocused x-rays

\u3cp\u3eWithin the quest for direct band-gap group IV materials, strain engineering in germanium is one promising route. We present a study of the strain distribution in single, suspended germanium nanowires using nanofocused synchrotron radiation. Evaluating the probed Bragg reflection for different illumination positions along the nanowire length results in corresponding strain components as well as the nanowire's tilting and bending. By using these findings we determined the complete strain state with the help of finite element modelling. The resulting information provides us with the possibility of evaluating the validity of the strain investigations following from Raman scattering experiments which are based on the assumption of purely uniaxial strain.\u3c/p\u3

Coherence and wavefront characterization of Si-111 monochromators using double-grating interferometry

A study of the coherence and wavefront properties of a pseudo-channel-cut monochromator in comparison with a double-crystal monochromator is presented. Using a double-grating interferometer designed for the hard X-ray regime, the complex coherence factor was measured and the wavefront distortions at the sample position were analyzed. A transverse coherence length was found in the vertical direction that was a factor of two larger for the channel-cut monochromator owing to its higher mechanical stability. The wavefront distortions after different optical elements in the beam, such as monochromators and mirrors, were also quantified. This work is particularly relevant for coherent diffraction imaging experiments with synchrotron sources. (C) 2010 International Union of Crystallography Printed in Singapore - all rights reserve

Structural Investigations of Core-shell Nanowires Using Grazing Incidence X-ray Diffraction.

The fabrication of core-shell structures is crucial for many nanowire device concepts. For the proper tailoring of their electronic properties, control of structural parameters such as shape, size, diameter of core and shell, their chemical composition, and information on their strain fields is mandatory. Using synchrotron X-ray diffraction studies and finite element simulations, we determined the chemical composition, dimensions, and strain distribution for series of InAs/InAsP core-shell wires grown on Si(111) with systematically varied growth parameters. In particular we detect initiation of plastic relaxation of these structures with increasing shell thickness and/or increasing phosphorus content. We establish a phase diagram, defining the region of parameters leading to pseudomorphic nanowire growth. This is important to avoid extended defects which are detrimental for their electronic properties

Self-Seeded Axio-Radial InAs-InAs1-xPx Nanowire Heterostructures beyond "common" VLS Growth

Semiconductors are essential for modern electronic and optoelectronic devices. To further advance the functionality of such devices, the ability to fabricate increasingly complex semiconductor nanostructures is of utmost importance. Nanowires offer excellent opportunities for new device concepts; heterostructures have been grown in either the radial or axial direction of the core nanowire but never along both directions at the same time. This is a consequence of the common use of a foreign metal seed particle with fixed size for nanowire heterostructure growth. In this work, we present for the first time a growth method to control heterostructure growth in both the axial and the radial directions simultaneously while maintaining an untapered self-seeded growth. This is demonstrated for the InAs/InAs1-xPx material system. We show how the dimensions and composition of such axio-radial nanowire heterostructures can be designed including the formation of a "pseudo-superlattice" consisting of five separate InAs1-xPx segments with varying length. The growth of axio-radial nanowire heterostructures offers an exciting platform for novel nanowire structures applicable for fundamental studies as well as nanowire devices. The growth concept for axio-radial nanowire heterostructures is expected to be fully compatible with Si substrates