The Variability of Polarized Radiation from Sgr A*

Sgr A* is variable at radio and submillimeter wavelengths on hourly time scales showing time delays between the peaks of flare emission as well as linearly polarized emission at millimeter and sub-mm wavelengths. To determine the polarization characteristics of this variable source at radio frequencies, we present VLA observations of Sgr A* and report the detection of polarized emission at a level of 0.77\pm0.01% and 0.2\pm0.01% at 43 and 22 GHz, respectively. The change in the time averaged polarization angle between 22 and 43 GHz corresponds to a RM of -2.5\pm0.6 x10^3 rad m{-2} with no phase wrapping (or \sim 5x10^4 rad m^2 with 2\pi phase wrap). We also note a rise and fall time scale of 1.5 -- 2 hours in the total polarized intensity. The light curves of the degree of linearly polarized emission suggests a a correlation with the variability of the total intensity at 43 GHz. The available polarization data at radio and sub-mm wavelengths suggest that the rotation measure decreases with decreasing frequency. This frequency dependence, and observed changes in polarization angle during flare events, may be caused by the reduction in rotation measure associated with the expansion of synchrotron-emitting blobs.Comment: 11 pages, 3 figures, ApJL (in press

Ferromagnetism in a dilute magnetic semiconductor -- Generalized RKKY interaction and spin-wave excitations

Carrier-mediated ferromagnetism in a dilute magnetic semiconductor has been studied using i) a single-impurity based generalized RKKY approach which goes beyond linear response theory, and ii) a mean-field-plus-spin-fluctuation (MF+SF) approach within a (purely fermionic) Hubbard-model representation of the magnetic impurities, which incorporates dynamical effects associated with finite frequency spin correlations in the ordered state. Due to a competition between the magnitude of the carrier spin polarization and its oscillation length scale, the ferromagnetic spin coupling is found to be optimized with respect to both hole doping concentration and impurity-carrier spin coupling energy $J$ (or equivalently $U$). The ferromagnetic transition temperature $T_c$, deteremined within the spin-fluctuation theory, corresponds closely with the observed $T_c$ values. Positional disorder of magnetic impurities causes significant stiffening of the high-energy magnon modes. We also explicitly study the stability/instability of the mean-field ferromagnetic state, which highlights the role of competing AF interactions causing spin twisting and noncollinear ferromagnetic ordering.Comment: 10 pages, 12 figure

Array-conditioned deconvolution of multiple component teleseismic recordings

We investigate the applicability of an array-conditioned deconvolution technique, developed for analyzing borehole seismic exploration data, to teleseismic receiver functions and data preprocessing steps for scattered wavefield imaging. This multichannel deconvolution technique constructs an approximate inverse filter to the estimated source signature by solving an overdetermined set of deconvolution equations, using an array of receivers detecting a common source. We find that this technique improves the efficiency and automation of receiverfunction calculation and data preprocessing workflow. We apply this technique to synthetic experiments and to teleseismic data recorded in a dense array in northern Canada. Our results show that this optimal deconvolution automatically determines and subsequently attenuates the noise from data, enhancing P-to-S converted phases in seismograms with various noise levels. In this context, the array-conditioned deconvolution presents a new, effective and automatic means for processing large amounts of array data, as it does not require any ad-hoc regularization; the regularization is achieved naturally by using the noise present in the array itself

Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States

Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is here discussed using Monte Carlo simulations. This effort is a continuation of previous work (G. Alvarez, Phys. Rev. Lett. 89, 277202 (2002)) where the static properties of the model were studied. The present results support the view that the relevant regime of J/t (standard notation) is that of intermediate coupling, where carriers are only partially trapped near Mn spins, and locally ordered regions (clusters) are present above the Curie temperature T_C. This conclusion is based on the calculation of the resistivity vs. temperature, that shows a soft metal to insulator transition near T_C, as well on the analysis of the density-of-states and optical conductivity. In addition, in the clustered regime a large magnetoresistance is observed in simulations. Formal analogies between DMS and manganites are also discussed.Comment: Revtex4, 20 figures. References updated, minor changes to figures and tex

Temperature-dependent magnetization in diluted magnetic semiconductors

We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of our mean-field calculations, particularly the dynamical mean field theory results, give excellent qualitative agreement with the experimentally observed magnetization in systems with itinerant charge carriers, such as Ga_{1-x}Mn_xAs with 0.03 < x < 0.07, whereas our percolation-theory-based calculations agree well with the existing data in strongly insulating materials, such as Ge_{1-x}Mn_x. We comment on the issue of non-mean-field like magnetization curves and on the observed incomplete saturation magnetization values in diluted magnetic semiconductors from our theoretical perspective. In agreement with experimental observations, we find the carrier density to be the crucial parameter determining the magnetization behavior. Our calculated dependence of magnetization on external magnetic field is also in excellent agreement with the existing experimental data.Comment: 17 pages, 15 figure

Heterogeneities in systems with quenched disorder

We study the strong role played by structural (quenched) heterogeneities on static and dynamic properties of the Frustrated Ising Lattice Gas in two dimensions, already in the liquid phase. Differently from the dynamical heterogeneities observed in other glass models in this case they may have infinite lifetime and be spatially pinned by the quenched disorder. We consider a measure of local frustration, show how it induces the appearance of spatial heterogeneities and how this reflects in the observed behavior of equilibrium density distributions and dynamic correlation functions.Comment: 8 page

Out of equilibrium dynamics of a Quantum Heisenberg Spin Glass

We study the out of equilibrium dynamics of the infinite range quantum Heisenberg spin glass model coupled to a thermal relaxation bath. The SU(2) spin algebra is generalized to SU(N) and we analyse the large-N limit. The model displays a dynamical phase transition between a paramagnetic and a glassy phase. In the latter, the system remains out of equilibrium and displays an aging phenomenon, which we characterize using both analytical and numerical methods. In the aging regime, the quantum fluctuation-dissipation relation is violated and replaced at very long time by its classical generalization, as in models involving simple spin algebras studied previously. We also discuss the effect of a finite coupling to the relaxation baths and their possible forms. This work completes and justifies previous studies on this model using a static approach.Comment: Minor change

Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors

The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these materials have suggested that the polaron-polaron interaction is ferromagnetic, in contrast to the antiferromagnetic carrier-carrier interactions that are characteristic of nonmagnetic semiconductors. To explain this behavior, a model has been developed in which polarons interact via both the standard direct carrier-carrier exchange interaction (due to virtual carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due to the interactions of polarons with magnetic ions in an interstitial region). Using a variational procedure, the optimal values of the model parameters were determined as a function of temperature. At temperatures of interest, the parameters describing polaron-polaron interactions were found to be nearly temperature-independent. For reasonable values of these constant parameters, we find that indirect ferromagnetic interactions can dominate the direct antiferromagnetic interactions and cause the polarons to align. This result supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure

Heterogeneous aging in spin glasses

We introduce a set of theoretical ideas that form the basis for an analytical framework capable of describing nonequilibrium dynamics in glassy systems. We test the resulting scenario by comparing its predictions with numerical simulations of short-range spin glasses. Local fluctuations and responses are shown to be connected by a generalized local out-of-equilibrium fluctuation-dissipation relation. Scaling relationships are uncovered for the slow evolution of heterogeneities at all time scales.Comment: Substantially reorganized to improve clarity of exposition. Accepted for publication in Physical Review Letters. 5 pages, 4 figure

Indirect exchange in GaMnAs bilayers via spin-polarized inhomogeneous hole gas: Monte Carlo simulation

The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas due to the existence of an average magnetization in the magnetic layers, establishing, in this way, a self-consistency between the magnetic order and the electronic structure. That interaction leads to an internal ferromagnetic order inside each layer, and a parallel arrangement between their magnetizations, even in the case of thin layers. This fact is analyzed in terms of the inter- and intra-layer interactions.Comment: 17 pages and 14 figure