Carrier-mediated ferromagnetism in a dilute magnetic semiconductor has been
studied using i) a single-impurity based generalized RKKY approach which goes
beyond linear response theory, and ii) a mean-field-plus-spin-fluctuation
(MF+SF) approach within a (purely fermionic) Hubbard-model representation of
the magnetic impurities, which incorporates dynamical effects associated with
finite frequency spin correlations in the ordered state. Due to a competition
between the magnitude of the carrier spin polarization and its oscillation
length scale, the ferromagnetic spin coupling is found to be optimized with
respect to both hole doping concentration and impurity-carrier spin coupling
energy J (or equivalently U). The ferromagnetic transition temperature
Tc, deteremined within the spin-fluctuation theory, corresponds closely with
the observed Tc values. Positional disorder of magnetic impurities causes
significant stiffening of the high-energy magnon modes. We also explicitly
study the stability/instability of the mean-field ferromagnetic state, which
highlights the role of competing AF interactions causing spin twisting and
noncollinear ferromagnetic ordering.Comment: 10 pages, 12 figure