1 research outputs found
Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films
We
report the first direct dry transfer of a single-crystalline thin
film grown by molecular beam epitaxy. A double cantilever beam fracture
technique was used to transfer epitaxial bismuth thin films grown
on silicon (111) to silicon strips coated with epoxy. The transferred
bismuth films retained electrical, optical, and structural properties
comparable to the as-grown epitaxial films. Additionally, we isolated
the bismuth thin films on freestanding flexible cured-epoxy post-transfer.
The adhesion energy at the bismuth/silicon interface was measured
to be ∼1 J/m<sup>2</sup>, comparable to that of exfoliated
and wet transferred graphene. This low adhesion energy and ease of
transfer is unexpected for an epitaxially grown film and may enable
the study of bismuth’s unique electronic and spintronic properties
on arbitrary substrates. Moreover, this method suggests a route to
integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary
substrates, as well as potentially to isolate bismuthene, the atomic
thin-film limit of bismuth