Growth variation effects in SiGe-based quantum cascade lasers

Epitaxial growth of SiGe quantum cascade (QC) lasers has thus far proved difficult, and nonabrupt Ge profiles are known to exist. We model the resulting barrier degradation by simulating annealing in pairs of quantum wells (QWs). Using a semiclassical charge transport model, we calculate the changes in scattering rates and transition energy between the lowest pair of subbands. We compare results for each of the possible material configurations for SiGe QC lasers. The effects are most severe in n-type (001) Si-rich systems due to the large effective electron mass, and in p-type systems due to the coexistence of light holes and heavy holes. The lower effective mass and conduction band offset of (111) oriented systems minimizes the transition energy variation, and a large interdiffusion length (Ld = 1.49 nm) is tolerated with respect to the scattering rate. Ge-rich systems are shown to give the best tolerance with respect to subband separation (Ld = 3.31 nm), due also to their low effective mass

Nonequilibrium electron heating in inter-subband terahertz lasers

Inter-subband laser performance can be critically dependent on the nature of the electron distributions in each subband. In these first Monte Carlo device simulations of optically pumped inter-subband THz lasers, we can see that there are two main causes of electron heating: intersubband decay processes, and inter-subband energy transfer from the "hot" nonequilibrium tails of lower subbands. These processes mean that devices relying on low electron temperatures are disrupted by electron heating, to the extent that slightly populated subbands can have average energies far in excess of the that of either the lattice or other subbands. However, although these heating effects invalidate designs relying on low temperature electron distributions, we see that population inversion is still possible in the high-THz range at 77 K in both stepped and triple-well structures, and that our 11.7 THz triple-well structure even promises inversion at 300 K. © 2002 American Institute of Physics

Stark ladders as tunable far-infrared emitters

A superlattice of GaAs/Ga(1 – x)Al(x)As quantum wells forms a Stark ladder under the influence of a perpendicular electric field. A two level incoherent emitter system, formed by radiative intersubband transitions between adjacent wells, is investigated as a tunable far-infrared radiation source. Intersubband transition rates are calculated at 4, 77, and 300 K for applied fields from 0 to 40 kV cm(–1). It is shown that the quantum efficiency of the radiative emission reaches a maximum at low temperatures for a field of 32 kV cm(–1). Under these conditions the emission wavelength is 38 µm with an estimated power output of 1.1 mW. © 1998 American Institute of Physics

Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures

Analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using self-consistent rate equations simulations. The hole subband structure is calculated using the 6×6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic, and optical phonon scattering, as well as hole-hole scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype THz Si/SiGe quantum cascade structures. © 2004 American Institute of Physic

Simulated [111] Si-SiGe terahertz quantum cascade laser

The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon and Coulombic interactions. We predict gain greater than 40 cm-1 and a threshold current density of 70 A/cm2

Design of Ge/SiGe quantum-confined Stark effect electroabsorption heterostructures for CMOS compatible photonics

We describe a combined 6×6 k.p and one-band effective mass modelling tool to calculate absorption spectra in Ge–SiGe multiple quantum well (MQW) heterostructures. We find good agreement with experimentally measured absorption spectra of Ge–SiGe MQW structures described previously in the literature, proving its predictive capability, and the simulation tool is used for the analysis and design of electroabsorption modulators. We employ strain-engineering in Ge–SiGe MQW systems to design structures for modulation at 1310 nm and 1550 nm

Non-lysine ubiquitylation:Doing things differently

The post-translational modification of proteins with ubiquitin plays a central role in nearly all aspects of eukaryotic biology. Historically, studies have focused on the conjugation of ubiquitin to lysine residues in substrates, but it is now clear that ubiquitylation can also occur on cysteine, serine, and threonine residues, as well as on the N-terminal amino group of proteins. Paradigm-shifting reports of non-proteinaceous substrates have further extended the reach of ubiquitylation beyond the proteome to include intracellular lipids and sugars. Additionally, results from bacteria have revealed novel ways to ubiquitylate (and deubiquitylate) substrates without the need for any of the enzymatic components of the canonical ubiquitylation cascade. Focusing mainly upon recent findings, this review aims to outline the current understanding of non-lysine ubiquitylation and speculate upon the molecular mechanisms and physiological importance of this non-canonical modification

Theory and design of quantum cascade lasers in (111) n-type Si/SiGe

Although most work towards the realization of group IV quantum cascade lasers (QCLs) has focused on valence band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited shortcomings of n-type Si/SiGe heterostructures can be overcome by moving to the (111) growth direction. Specifically, a large band offset and low effective mass are achievable and subband degeneracy is preserved. We predict net gain up to lattice temperatures of 90 K in a bound-to-continuum QCL with a double-metal waveguide, and show that a Ge interdiffusion length of at least 8 Å across interfaces is tolerable

Quantum Oscillations in an Impurity-Band Anderson Insulator

We show that for a system of localized electrons in an impurity band, which form an Anderson insulating state at zero temperature, there can appear quantum oscillations of the magnetization, i.e. the Anderson insulator can exhibit the de Haas-van Alphen effect. This is possible when the electronic band from which the localized states are formed has an extremum that traces out a nonzero area in reciprocal space. Our work extends existing theories for clean band insulators of this form to the situation where they host an impurity band. We show that the energies of these impurity levels oscillate with magnetic field, and compute the conditions under which these oscillations can dominate the de Haas-van Alphen effect. We discuss our results in connection with experimental measurements of quantum oscillations in Kondo insulators, and propose other experimental systems where the impurity band contribution can be dominant.Comment: Submission to SciPost, updated following referee comment

Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces

Scattering rate calculations in two-dimensional Si/Si1−xGex systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces however, may exhibit diffuse Ge profiles either by design or as a limitation of the growth process. It is shown here that alloy disorder scattering dramatically increases with Ge interdiffusion in (100) and (111) n-type quantum wells, but remains almost constant in (100) p-type heterostructures. It is also shown that smoothing of the confining potential leads to large changes in subband energies and scattering rates and a method is presented for calculating growth process tolerances