Decomposition of N2O on the Si(100)2 × 1 and Si(111)7 × 7 surfaces: Determination of the density of broken bonds

This paper reports on the site-specific decomposition behaviour of N2O onthe clean Si(100)2 × 1 and Si(111)7 × 7 surfaces at room temperature, studied by spectroscopic differential reflectometry (SDR) and Auger electron spectroscopy (AES). It has been established that Si---O bond formation occurs at the toplayer Si atoms, mainly via attachment of the unsaturated broken bonds. In this way it is possible to determine the density of broken (dangling) bonds at the clean Si surface. Our results confirm the high dangling bond density at the 2 × 1 reconstructed Si(100) surface for which we assume a defect density of 15 ± 10%. The density of dangling bonds per 7 × 7 unit cell (49 atoms), 23 ± 4, is in agreement with the established 19 as revealed by current imaging tunneling spectroscopy (CITS)

The adsorption behaviour of O2 on the clean Si(110) surface in the early stage

This Letter reports on the early stage of adsorption of O2 on the clean Si(110) surface, showing a prominent 5×1 reconstruction, in ultrahigh vacuum at 300 K. Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) have been used to monitor this solid-gas reaction. Careful measurements of the normalized oxygen Auger signal in the low exposure region reveal, for the first time, a remarkably fast adsorption of O2 up to 0.15 monolayer of oxygen, the initial sticking probability being about 1. The LEED measurements suggest that those surface sites which constitute the additional higher order reconstructions, are highly reactive

Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2x1 surface as revealed by the change in the surface conductance

The adsorption behaviour of N2O on the Si(001)2 × 1 surface at 300 K substrate temperature has been investigated by measuring in situ the surface conductance during the reaction process. For comparison we monitored in the same way the adsorption of O2 on the same surface which ultimately leads to the flat band situation. The adsorption of atomic oxygen as released by decomposition of the N2O molecule, in contrast with molecular oxygen, was found to result in an increase of the band bending. The difference in behaviour of the change of the surface conductance between the two solid-gas reactions can be explained by considering that the adsorption of O2 will also remove deep-lying backbond states in addition to the dangling bond (DB) and dimer bond (DM) related surface states. It is well known that only the DB and DM surface states are affected by N2O. The surface conductance measurements (SCM) presented in this paper complement our previous spectroscopic differential reflectivity measurements and Auger electron spectroscopic results for the system Si(001)2 × 1 + N2O; we have found evidence that the second step of the proposed three-stage adsorption process of atomic oxygen can be divided into two substages. From our SCM data we could derive that the distance between the valence band edge and the Fermi energy of the clean Si(001)2 × 1 surface is 0.32 ± 0.02 eV, which is in agreement with previous photoemission results

Scanning Auger microscopy as applied to the analysis of highly textured YBaCu3Ox thin films

Scanning Auger electron spectroscopy and scanning electron microscopy have been used to investigate the local composition and structure of highly textured axis oriented YBaCuO films with thicknesses in the range 0.4–1 μm. The cuprate films were sputtered on MgO and sapphire (100)-oriented single-crystal substrates at room temperature followed by several anneal stages below or at 920°C in pure oxygen. The YBaCuO/sapphire sample was examined again after an additional 750°C air anneal for 24 h. By applying Auger line profiling on a freshly prepared cross-sectional surface of a thin cuprate film deposited on a sapphire substrate we have been able to show that barium aluminate segregation at grain boundaries is the main cause of the higher electrical resistance usually observed for cuprate films on Al2O3. The (drastic) reduction in Tc can be attributed to the substitution of aluminium in the cuprate at copper sites. Severe interdiffusion has been observed for the epitaxial c axis oriented YBaCu oxide films grown on an MgO substrate, which leads to a deterioration in the superconductivity. The main reason for reduced Tc and quality of cuprate films on MgO is the copper loss into the substrate, the depth of penetration of copper extending more than 400 nm below the YBaCuO---MgO interface. From our experimental results it is evident that Auger line profiling is an important tool in the analysis of high Tc superconducting thin films

Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

Thin silicon nitride films (100–210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar+ sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results

Adsorption of atomic and molecular oxygen on Si(100)2x1: coverage dependence of the Auger O KVV lineshape.

By means of Auger electron spectroscopy (AES) we have monitored the room temperature adsorption of O2 and N2O on the clean Si(0 0 1)2 × 1 surface. We have found, for the first time, a significant variation in the intensity ratio of the K L1 L1 and K L23 L23 O Auger lines in the submonolayer range. This variation can be related to a change in bonding configuration of the oxygen atom/molecule in the initial adsorption stage in which the influence of inter-atomic matrix elements of the Auger process cannot be neglected

Decomposition of thin titanium deuteride films: thermal desorption kinetics studies combined with microstructure analysis

The thermal evolution of deuterium from thin titanium films, prepared under UHV conditions and deuterated in situ at room temperature, has been studied by means of thermal desorption mass spectrometry (TDMS) and a combination of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The observed Ti film thickness dependent morphology was found to play a crucial role in the titanium deuteride (TiDy) film formation and its decomposition at elevated temperatures. TDMS heating induced decomposition of fine-grained thin Ti films, of 10–20 nm thickness, proceeds at low temperature (maximum peak temperature Tm about 500 K) and its kinetics is dominated by a low energy desorption (ED = 0.61 eV) of deuterium from surface and subsurface areas of the Ti film. The origin of this process is discussed as an intermediate decomposition state towards recombinative desorption of molecular deuterium. The TiDy bulk phase decomposition becomes dominant in the kinetics of deuterium evolution from thicker TiDy films. The dominant TDMS peak at approx. Tm = 670 K, attributed to this process, is characterized by ED = 1.49 eV