7,257 research outputs found

    Nematicity as a route to a magnetic field-induced spin density wave order; application to the high temperature cuprates

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    The electronic nematic order characterized by broken rotational symmetry has been suggested to play an important role in the phase diagram of the high temperature cuprates. We study the interplay between the electronic nematic order and a spin density wave order in the presence of a magnetic field. We show that a cooperation of the nematicity and the magnetic field induces a finite coupling between the spin density wave and spin-triplet staggered flux orders. As a consequence of such a coupling, the magnon gap decreases as the magnetic field increases, and it eventually condenses beyond a critical magnetic field leading to a field-induced spin density wave order. Both commensurate and incommensurate orders are studied, and the experimental implications of our findings are discussed.Comment: 5 pages, 3 figure

    A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier

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    This paper demonstrated the first 2-stage, 2.8W, 1.8V, 1.9GHz fully-integrated DAT power amplifier with 50Ω input and output matching using 0.18μm CMOS transistors. It has a small-signal gain of 27dB. The amplifier provides 2.8W of power into a 50Ω load with a PAE of 50%

    A 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier

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    A 2.4-GHz, 2.2-W, 2-V fully integrated circular geometry power amplifier with 50 Ω input and output matching is fabricated using 2.5V, 0.35 pm CMOS transistors. It can also produce 450mW using a 1V supply. Harmonic suppression is 64dB or better. An on-chip circular-geometry active-transformer is used to combine several push-pull low-voltage amplifiers efficiently to produce a larger output power while maintaining a 50 Ω match. This new on-chip power combining and impedance matching method uses virtual ac grounds and magnetic couplings extensively to eliminate the need for any off-chip component such as wirebonds. It also desensitizes the operation of the amplifier to the inductance of bonding wires and makes the design more reproducible. This new topology makes possible a fully-integrated 2.2W, 2.4GHz, low voltage CMOS power amplifier for the first time

    The Class-E/F Family of ZVS Switching Amplifiers

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    A new family of switching amplifiers, each member having some of the features of both class E and inverse F, is introduced. These class-E/F amplifiers have class-E features such as incorporation of the transistor parasitic capacitance into the circuit, exact truly switching time-domain solutions, and allowance for zero-voltage-switching operation. Additionally, some number of harmonics may be tuned in the fashion of inverse class F in order to achieve more desirable voltage and current waveforms for improved performance. Operational waveforms for several implementations are presented, and efficiency estimates are compared to class-E

    Distributed active transformer - a new power-combining andimpedance-transformation technique

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    In this paper, we compare the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods. Their fundamental power-efficiency limitations in the design of high-power fully integrated amplifiers in standard silicon process technologies are analyzed. The DAT is demonstrated to be an efficient impedance-transformation and power-combining method, which combines several low-voltage push-pull amplifiers in series by magnetic coupling. To demonstrate the validity of the new concept, a 2.4-GHz 1.9-W 2-V fully integrated power-amplifier achieving a power-added efficiency of 41% with 50-Ω input and output matching has been fabricated using 0.35-μm CMOS transistor

    A novel method of increasing the range of 1.65µm OTDR using a Q-switched erbium fibre laser

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    This paper demonstrates a novel method of increasing the range of a 1.65µm optical time domain reflectometer system (OTDR). OTDR measurements at 1.65µm are more sensitive to fibre macro and micro bending losses than those produced at wavelengths 1.3 and 1.55µm. This enables problems to be identified in their early stages reducing the risk of total system failure. However, the dynamic range of current 1.65µm OTDR systems
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