Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE

A correlation between substrate dopant type and the absorption spectra of MQW structures has been identified. Optical absorption spectra from MQW structures grown on S-doped InP can show poorly resolved excitonic features with respect to those obtained from structures grown on both Sn- and Fe-doped substrates. It is proposed that this degradation is due to enhanced interfacial diffusion on the Group V sublattice for structures grown on substrates incorporating low defect densities