12 research outputs found
Self-Limiting Oxides on WSe<sub>2</sub> as Controlled Surface Acceptors and Low-Resistance Hole Contacts
Transition metal oxides show much
promise as effective p-type contacts and dopants in electronics based
on transition metal dichalcogenides. Here we report that atomically
thin films of under-stoichiometric tungsten oxides (WO<sub><i>x</i></sub> with <i>x</i> < 3) grown on tungsten
diselenide (WSe<sub>2</sub>) can be used as both controlled charge
transfer dopants and low-barrier contacts for p-type WSe<sub>2</sub> transistors. Exposure of atomically thin WSe<sub>2</sub> transistors
to ozone (O<sub>3</sub>) at 100 °C results in self-limiting oxidation
of the WSe<sub>2</sub> surfaces to conducting WO<sub><i>x</i></sub> films. WO<sub><i>x</i></sub>-covered WSe<sub>2</sub> is highly hole-doped due to surface electron transfer from the underlying
WSe<sub>2</sub> to the high electron affinity WO<sub><i>x</i></sub>. The dopant concentration can be reduced by suppressing the
electron affinity of WO<sub><i>x</i></sub> by air exposure,
but exposure to O<sub>3</sub> at room temperature leads to the recovery
of the electron affinity. Hence, surface transfer doping with WO<sub><i>x</i></sub> is virtually controllable. Transistors based
on WSe<sub>2</sub> covered with WO<sub><i>x</i></sub> show
only p-type conductions with orders of magnitude better on-current,
on/off current ratio, and carrier mobility than without WO<sub><i>x</i></sub>, suggesting that the surface WO<sub><i>x</i></sub> serves as a p-type contact with a low hole Schottky barrier.
Our findings point to a simple and effective strategy for creating
p-type devices based on two-dimensional transition metal dichalcogenides
with controlled dopant concentrations
Carrier Polarity Control in 뱉MoTe<sub>2</sub> Schottky Junctions Based on Weak Fermi-Level Pinning
The
polarity of the charge carriers injected through Schottky junctions
of α-phase molybdenum ditelluride (α-MoTe<sub>2</sub>)
and various metals was characterized. We found that the Fermi-level
pinning in the metal/α-MoTe<sub>2</sub> Schottky junction is
so weak that the polarity of the carriers (electron or hole) injected
from the junction can be controlled by the work function of the metals,
in contrast to other transition metal dichalcogenides such as MoS<sub>2</sub>. From the estimation of the Schottky barrier heights, we
obtained p-type carrier (hole) injection from a Pt/α-MoTe<sub>2</sub> junction with a Schottky barrier height of 40 meV at the
valence band edge. n-Type carrier (electron) injection from Ti/α-MoTe<sub>2</sub> and Ni/α-MoTe<sub>2</sub> junctions was also observed
with Schottky barrier heights of 50 and 100 meV, respectively, at
the conduction band edge. In addition, enhanced ambipolarity was demonstrated
in a PtâTi hybrid contact with a unique structure specially
designed for polarity-reversible transistors, in which Pt and Ti electrodes
were placed in parallel for injecting both electrons and holes
Concerted Chemical-Mechanical Reaction in Catalyzed Growth of Confined Graphene Layers into Hexagonal Disks
Graphene and graphite synthesis of uniform films is becoming
routine,
so now efforts are turning to grow specific patterns or complex structures.
More research is needed with regard to the practical aspects of the
growth of graphene layers, especially as it relates to self-assembled
structures. We used gallium-catalyzed thermal decomposition of silicon
carbide to understand spatially confined growth. Growing graphene
layers push on a large step in hard silicon carbide (SiC) with significant
force, as observed by high-resolution transmission electron microscopy
of film cross sections. Alternatively multiple graphitic layers can
grow into disks embedded in silicon carbide if the crystal is heated
above the transition to plastic deformation. Euler buckling appears
to limit the size and deformation of the silicon carbide crystal to
produce graphitic flakes with an oriented hexagonal shape. These results
illustrate the effect of the mechanical force of growing graphene
in confined spaces: the growing graphene can be redirected, graphene
can deform the confining barrier, or growth of graphene can be limited.
This also provides a route for fabrication of masses of homogeneous,
hexagonal disks of graphite with dimensions that are tuned by directed
self-assembly
Layer-by-Layer Oxidation Induced Electronic Properties in Transition-Metal Dichalcogenides
Recent
progress in transition-metal dichalcogenides has opened
up new possibilities for atomically thin nanomaterial based electronic
device applications. Here we investigate atomic-scale self-assembled
heterojunction modulated by layer-by-layer controlled oxidation in
monolayer and few-layer dichalcogenide systems and their electronic
properties within a first-principles framework. Pristine dichalcogenide
systems exhibit semiconducting behavior. We observe reduction of the
band gap for partial oxidation of the top layer. However, complete
oxidation of the top layer makes the system metallic, owing to the
charge transfer from the pristine to the oxidized layer, as observed
in recent experiments. When the bottom layer gets partially oxidized
with fully oxidized top layers, the system shows unprecedented semimetallic
behavior. The appearance of valence band maximum and conduction band
minimum at different k-points can introduce valley polarization. Therefore,
our study shows controlled oxidation induced varying electronic properties
in dichalcogenide based heterojunctions that can be exploited for
advanced electronic, optoelectronic, and valleytronic device applications
Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates
We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for atomic-scale layers on dielectric substrates. Unprecedentedly wide-range Raman data for atomically flat MoS<sub>2</sub> flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum <i>versus</i> thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers
Electrostatically Reversible Polarity of Ambipolar 뱉MoTe<sub>2</sub> Transistors
A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe<sub>2</sub>) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor
Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS<sub>2</sub> Layers
Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS<sub>2</sub> interfaces. For MoS<sub>2</sub> thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS<sub>2</sub> thickness. By contrast, the contact resistivity sharply increases with reducing MoS<sub>2</sub> thickness below 5 layers, mainly governed by the quantum confinement effect. We find that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS<sub>2</sub> thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities
Conduction Tuning of Graphene Based on Defect-Induced Localization
The conduction properties of graphene were tuned by tailoring the lattice by using an accelerated helium ion beam to embed low-density defects in the lattice. The density of the embedded defects was estimated to be 2â3 orders of magnitude lower than that of carbon atoms, and they functionalized a graphene sheet in a more stable manner than chemical surface modifications can do. Current modulation through back gate biasing was demonstrated at room temperature with a current onâoff ratio of 2 orders of magnitude, and the activation energy of the thermally activated transport regime was evaluated. The exponential dependence of the current on the length of the functionalized region in graphene suggested that conduction tuning is possible through strong localization of carriers at sites induced by a sparsely distributed random potential modulation
Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe<sub>2</sub>
Growth of a uniform oxide film with
a tunable thickness on two-dimensional transition metal dichalcogenides
is of great importance for electronic and optoelectronic applications.
Here we demonstrate homogeneous surface oxidation of atomically thin
WSe<sub>2</sub> with a self-limiting thickness from single- to trilayers.
Exposure to ozone (O<sub>3</sub>) below 100 °C leads to the lateral
growth of tungsten oxide selectively along selenium zigzag-edge orientations
on WSe<sub>2</sub>. With further O<sub>3</sub> exposure, the oxide
regions coalesce and oxidation terminates leaving a uniform thickness
oxide film on top of unoxidized WSe<sub>2</sub>. At higher temperatures,
oxidation evolves in the layer-by-layer regime up to trilayers. The
oxide films formed on WSe<sub>2</sub> are nearly atomically flat.
Using photoluminescence and Raman spectroscopy, we find that the underlying
single-layer WSe<sub>2</sub> is decoupled from the top oxide but hole-doped.
Our findings offer a new strategy for creating atomically thin heterostructures
of semiconductors and insulating oxides with potential for applications
in electronic devices
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TIB Hannover: FR 3073+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman