23 research outputs found

    Contribution of magnetic aftereffect and induction transition characteristics of basalts from the Vitim plateau

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    To study magnetic aftereffect (magnetic viscosity) with its manifestations making difficulties for interpretation of the data of transitional processes, comprehensive experimental studies of samples have been conducted, which characterize the upper rock mass of the Vitim basaltic plateau. An attempt to reveal the character of distribution of magnetically viscous rocks within volcano-sedimentary succession of strata has been made and to find out which ferromagnetic particles display the effect of magnetic viscosity on the inductive transient response. It has been shown that in time-domain measurements with inductive systems the greatest contribution of magnetic viscosity effect is brought by the most fresh, unchanged rocks. Magnetic viscosity effect is mainly caused by super-paramagnetic grains of low-titanic titanomagnetite, close to pure magnetite with rather narrow grain-size interval (most probably 0.0254-0.029 mm). As for the smaller superparamagnetic grains, the contribution of relaxation of their magnetization to inductive transient responses is approximately 3 times lower. Possible criteria of diagnostics of superparamagnetic particles of different size are proposed on the base of petro-magnetic data

    New data on the metallogeny and deep structure of the Kirovograd Polymetal ore district (Ukrainian Shield)

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    Structural and petrological localization conditions and age relationships of uranium and gold deposits are discussed. A specific type of adulariachlorite wallrock alteration is found to be associated with sulfidegold mineralization. The relation between uranium, gold, lithium deposits and the topography of K2 and M surfaces are described. A 3 D seismic model of the Kirovograd ore district is suggested

    ДослідТСння ΡΠΏΠ΅ΠΊΡ‚Ρ€Π°Π»ΡŒΠ½ΠΈΡ… залСТностСй ΠΊΠΎΠ΅Ρ„Ρ–Ρ†Ρ–Ρ”Π½Ρ‚Π° поглинання Π² Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Ρ–Π²ΠΊΠ°Ρ… Π³Ρ–Π΄Ρ€ΠΎΠ²Π°Π½ΠΎΠ³ΠΎ ΠΊΡ€Π΅ΠΌΠ½Ρ–ΡŽ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ постійного фотоструму Π· ΠΌΠΎΠ΄ΡƒΠ»ΡŒΠΎΠ²Π°Π½ΠΈΠΌ збудТСнням

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    Spectral dependences of absorption coefficient in thin films of amorphous hydrogenated silicon are investigated. Silicon films were obtained by decomposition of monosilane and hydrogen mixture under hydrogen portion, corresponding to conditions of the beginning of nanocrystalline phase formation in structure of films. A new modification of the constant photocurrent method, based on the modulation of the exciting light flux, is developed and used to measure the spectral dependence of the absorption coefficient. The effect of illumination of different duration on films absorption spectra, measured by the proposed method, is investigated. According to the study of a-Si:H films, obtained under conditions corresponding to the beginning of formation of the crystalline phase, we can assume the presence of silicon nanocrystals in structure of the films and nanocrystals influence on the optical properties of a-Si:H.Π˜ΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ‹ ΡΠΏΠ΅ΠΊΡ‚Ρ€Π°Π»ΡŒΠ½Ρ‹Π΅ зависимости коэффициСнта поглощСния Π² Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Π΅Π½ΠΊΠ°Ρ… Π°ΠΌΠΎΡ€Ρ„Π½ΠΎΠ³ΠΎ Π³ΠΈΠ΄Ρ€ΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ крСмния, ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… Ρ€Π°Π·Π»ΠΎΠΆΠ΅Π½ΠΈΠ΅ΠΌ смСси моносилана ΠΈ Π²ΠΎΠ΄ΠΎΡ€ΠΎΠ΄Π° ΠΏΡ€ΠΈ ΠΎΡ‚Π½ΠΎΡΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠΉ Π΄ΠΎΠ»Π΅ Π²ΠΎΠ΄ΠΎΡ€ΠΎΠ΄Π° Π² Π³Π°Π·ΠΎΠ²ΠΎΠΉ смСси, ΡΠΎΠΎΡ‚Π²Π΅Ρ‚ΡΡ‚Π²ΡƒΡŽΡ‰Π΅ΠΉ условиям Π½Π°Ρ‡Π°Π»Π° формирования нанокристалличСской Ρ„Π°Π·Ρ‹ Π² структурС ΠΏΠ»Π΅Π½ΠΎΠΊ. Для измСрСния ΡΠΏΠ΅ΠΊΡ‚Ρ€Π°Π»ΡŒΠ½Ρ‹Ρ… зависимостСй коэффициСнта поглощСния ΠΏΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½ ΠΈ использован ΠΌΠΎΠ΄ΠΈΡ„ΠΈΡ†ΠΈΡ€ΠΎΠ²Π°Π½Π½Ρ‹ΠΉ ΠΌΠ΅Ρ‚ΠΎΠ΄ постоянного Ρ„ΠΎΡ‚ΠΎΡ‚ΠΎΠΊΠ°, основанный Π½Π° модуляции Π²ΠΎΠ·Π±ΡƒΠΆΠ΄Π°ΡŽΡ‰Π΅Π³ΠΎ свСтового ΠΏΠΎΡ‚ΠΎΠΊΠ°. ИсслСдовано влияниС освСщСния Ρ€Π°Π·Π»ΠΈΡ‡Π½ΠΎΠΉ Π΄Π»ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ Π½Π° спСктры поглощСния ΠΏΠ»Π΅Π½ΠΎΠΊ, ΠΈΠ·ΠΌΠ΅Ρ€Π΅Π½Π½Ρ‹Ρ… ΠΏΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π½Ρ‹ΠΌ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ. По Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Π°ΠΌ исслСдования ΠΏΠ»Π΅Π½ΠΎΠΊ a-Si:H, ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… Π² условиях, ΡΠΎΠΎΡ‚Π²Π΅Ρ‚ΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΡ… Π½Π°Ρ‡Π°Π»Ρƒ формирования кристалличСской Ρ„Π°Π·Ρ‹, ΠΌΠΎΠΆΠ½ΠΎ ΠΏΡ€Π΅Π΄ΠΏΠΎΠ»ΠΎΠΆΠΈΡ‚ΡŒ Π½Π°Π»ΠΈΡ‡ΠΈΠ΅ Π² структурС ΠΏΠ»Π΅Π½ΠΎΠΊ нанокристаллов крСмния, Π²Π»ΠΈΡΡŽΡ‰ΠΈΡ… Π½Π° оптичСскиС свойства a-Si:H.ДослідТСно ΡΠΏΠ΅ΠΊΡ‚Ρ€Π°Π»ΡŒΠ½Ρ– залСТності ΠΊΠΎΠ΅Ρ„Ρ–Ρ†Ρ–Ρ”Π½Ρ‚Π° поглинання Π² Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΏΠ»Ρ–Π²ΠΊΠ°Ρ… Π°ΠΌΠΎΡ€Ρ„Π½ΠΎΠ³ΠΎ Π³Ρ–Π΄Ρ€ΠΎΠ²Π°Π½ΠΎΠ³ΠΎ ΠΊΡ€Π΅ΠΌΠ½Ρ–ΡŽ, ΠΎΡ‚Ρ€ΠΈΠΌΠ°Π½ΠΈΡ… розкладанням ΡΡƒΠΌΡ–ΡˆΡ– моносілана Ρ– водню ΠΏΡ€ΠΈ відносній частці водню Π² Π³Π°Π·ΠΎΠ²Ρ–ΠΉ ΡΡƒΠΌΡ–ΡˆΡ–, Ρ‰ΠΎ Π²Ρ–Π΄ΠΏΠΎΠ²Ρ–Π΄Π°Ρ” ΡƒΠΌΠΎΠ²Π°ΠΌ ΠΏΠΎΡ‡Π°Ρ‚ΠΊΡƒ формування нанокристалічної Ρ„Π°Π·ΠΈ Π² структурі ΠΏΠ»Ρ–Π²ΠΎΠΊ. Для Π²ΠΈΠΌΡ–Ρ€ΡŽΠ²Π°Π½Π½Ρ ΡΠΏΠ΅ΠΊΡ‚Ρ€Π°Π»ΡŒΠ½ΠΈΡ… залСТностСй ΠΊΠΎΠ΅Ρ„Ρ–Ρ†Ρ–Ρ”Π½Ρ‚Π° поглинання Π·Π°ΠΏΡ€ΠΎΠΏΠΎΠ½ΠΎΠ²Π°Π½ΠΈΠΉ Ρ– використаний ΠΌΠΎΠ΄ΠΈΡ„Ρ–ΠΊΠΎΠ²Π°Π½ΠΈΠΉ ΠΌΠ΅Ρ‚ΠΎΠ΄ постійного фотоструму, заснований Π½Π° модуляції Π·Π±ΡƒΠ΄Π»ΠΈΠ²ΠΎΠ³ΠΎ світлового ΠΏΠΎΡ‚ΠΎΠΊΡƒ. ДослідТСно Π²ΠΏΠ»ΠΈΠ² освітлСння Ρ€Ρ–Π·Π½ΠΎΡ— тривалості Π½Π° спСктри поглинання ΠΏΠ»Ρ–Π²ΠΎΠΊ, виміряних Π·Π°ΠΏΡ€ΠΎΠΏΠΎΠ½ΠΎΠ²Π°Π½ΠΈΠΌ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ.Π—Π° Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Π°ΠΌΠΈ дослідТСння ΠΏΠ»Ρ–Π²ΠΎΠΊ a-Si: H, ΠΎΡ‚Ρ€ΠΈΠΌΠ°Π½ΠΈΡ… Π² ΡƒΠΌΠΎΠ²Π°Ρ…, Ρ‰ΠΎ Π²Ρ–Π΄ΠΏΠΎΠ²Ρ–Π΄Π°ΡŽΡ‚ΡŒ ΠΏΠΎΡ‡Π°Ρ‚ΠΊΡƒ формування кристалічної Ρ„Π°Π·ΠΈ, ΠΌΠΎΠΆΠ½Π° припустити Π½Π°ΡΠ²Π½Ρ–ΡΡ‚ΡŒ Ρƒ структурі ΠΏΠ»Ρ–Π²ΠΎΠΊ нанокристалів ΠΊΡ€Π΅ΠΌΠ½Ρ–ΡŽ, Ρ‰ΠΎ Π²ΠΏΠ»ΠΈΠ²Π°ΡŽΡ‚ΡŒ Π½Π° ΠΎΠΏΡ‚ΠΈΡ‡Π½Ρ– властивості a-Si: H
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