Spin-Based Neuron Model with Domain Wall Magnets as Synapse

We present artificial neural network design using spin devices that achieves ultra low voltage operation, low power consumption, high speed, and high integration density. We employ spin torque switched nano-magnets for modelling neuron and domain wall magnets for compact, programmable synapses. The spin based neuron-synapse units operate locally at ultra low supply voltage of 30mV resulting in low computation power. CMOS based inter-neuron communication is employed to realize network-level functionality. We corroborate circuit operation with physics based models developed for the spin devices. Simulation results for character recognition as a benchmark application shows 95% lower power consumption as compared to 45nm CMOS design

Boolean and Non-Boolean Computation With Spin Devices

Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on digital logic, and, their benefits over robust and high performance CMOS remains debatable. Ultra-low voltage, current-switching operation of magneto-metallic spin torque devices can potentially be more suitable for non-Boolean computation schemes that can exploit current-mode analog processing. Device circuit co-design for different classes of non-Boolean-architectures using spin-torque based neuron models in spin-CMOS hybrid circuits show that the spin-based non-Boolean designs can achieve 15X-100X lower computation energy for applications like, image-processing, data-conversion, cognitive-computing, pattern matching and programmable-logic, as compared to state of art CMOS designs.Comment: arXiv admin note: substantial text overlap with arXiv:1206.322