Studies on Roentogenographic Characteristics of the Stomach and Duodenum around the Pylorus 1. Normal Cases

To examine the "jet effect" which has been implicated by the up-suspending and down-suspending experiments of the MannWilliamson ulcer to be involved in ulcer formation, the gastroduodenal angle (GD angle) was established using the upright right anterior oblique view of an ordinary gastric X-ray inspection. The relationship between the GD angle and the morphology of the stomach and duodenum was studied in 88 healthy subjects. The mean GD angle was 105.7° in males and 96.5° in females. With an increase in the GD angle, the Ba (Width of gastric angle section)/Bc (Width of gastric body section) ratio decreased, suggesting an acceleration of the tension of the gastric walls, while the duodenal loop area and the duodenal loop height increased. In addition, the number of duodenal longitudinal folds (Lf) tended to increase, suggesting acceleration of duodenal motility. The mean loop area was 15.2 cm2 in males and 9.2 cm2 in females. Antral peristalsis (AP) correlated positively with the Ba/Bc ratio and inversely with the GD angle. In cases where the Lf number was more than two, i. e., accelerated cases, we found greater loop area and height, which suggested a correlation between them. An increase in the GD angle and AP as well as a decrease in the Ba/Bc ratio was also noted. This suggested gastric emptying based on the acceleration of gastric motility. It was suggested that in proximal duodenal anomaly (PDA) and distal duodenal anomaly (DDA), the motility of the stomach and duodenum differed

a‐InGaZnO thin‐film transistors for AMOLEDs: Electrical stability and pixel‐circuit simulation

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/92036/1/JSID17.6.525.pd

P‐11: Electrical Properties and Stability of Dual‐Gate Coplanar Homojunction Amorphous Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistor

The electrical characteristics and stabilities of dual‐gate (DG) coplanar homojunction amorphous indium‐gallium‐zinc‐oxide thin‐film transistors (a‐IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a‐IGZO TFT showed an excellent electrical performance with the sub‐threshold swing of 99 mV/dec, the mobility of 15.1 cm 2 /V·s and the on‐off ratio of 10 9 . Under positive bias temperature stress, the device threshold voltage shifts about +4.5V after 10,000 seconds, while its shifts under negative bias temperature stress are very small. The effect of TFT illumination is also discussed.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/93526/1/1.3621023.pd

P‐11: DC/AC Electrical Instability of R.F. Sputter Amorphous In‐Ga‐Zn‐O TFTs

The paper presents the study of electrical instability of RF sputter amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistor (TFT) induced by negative steady‐state (or D.C.) bias‐temperature‐stress (BTS). Similarly to positive BTS results [8], the stress time evolution of the threshold voltage shift (Δ V th ) induced by negative BTS under different stress voltages and temperatures can all be described by the stretched‐exponential model. for the first time, we also present the results for Δ V th under pulse (or A.C.) BTS. The Δ V th for positive A.C. BTS is found to have a pulse‐period dependence while a huge reduction of Δ V th is found for all negative A. C. BTS results. This might suggest the time for holes to accumulate near the a‐IGZO/ SiO 2 interface is much longer than the time for electrons. The effect of bi‐polar stressing is also discussed.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/92026/1/1.3256481.pd

On-The-Fly Observing System of the Nobeyama 45-m and ASTE 10-m Telescopes

We have developed spectral line On-The-Fly (OTF) observing mode for the Nobeyama Radio Observatory 45-m and the Atacama Submillimeter Telescope Experiment 10-m telescopes. Sets of digital autocorrelation spectrometers are available for OTF with heterodyne receivers mounted on the telescopes, including the focal-plane 5 x 5 array receiver, BEARS, on the 45-m. During OTF observations, the antenna is continuously driven to cover the mapped region rapidly, resulting in high observing efficiency and accuracy. Pointing of the antenna and readouts from the spectrometer are recorded as fast as 0.1 second. In this paper we report improvements made on software and instruments, requirements and optimization of observing parameters, data reduction process, and verification of the system. It is confirmed that, using optimal parameters, the OTF is about twice as efficient as conventional position-switch observing method.Comment: 11 pages, 13 figures, accepted for publication in PAS

Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor

The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we report on the origin of the hump and current drop in reliability tests caused by the degradation in the oxide semiconductor during a circuit driving test. The hump phenomenon and current drop according to two different driving stresses were verified. Through a numerical computational simulation, we confirmed that this issue can be caused by an additional “needle”, a shallow (~0.2 eV) and narrow (<0.1 eV), defect state near the conduction band minimum (CBM). This is also discussed in terms of the dual current path caused by leakage current in the channel edge. © 2019, The Author(s).1