1 research outputs found
Low-Temperature Atomic Layer Deposition of Low-Resistivity Copper Thin Films Using Cu(dmap)<sub>2</sub> and Tertiary Butyl Hydrazine
Herein, we describe
a process for the low-temperature atomic layer
deposition of copper using CuÂ(dmap)<sub>2</sub> (dmap = dimethylamino-2-propoxide).
The use of tertiary butyl hydrazine (TBH) as the reducing agent was
found to have a significant improvement on the purity and the resistivity
of the Cu films compared to previous processes. Our process was studied
at low temperatures of 80–140 °C on native oxide terminated
Si. At 120 °C, self-limiting Cu deposition was demonstrated with
respect to both CuÂ(dmap)<sub>2</sub> and TBH pulse lengths. During
the initial stages of the deposition (125–1000 cycles), a growth
rate of 0.17 Ã…/cycle was measured. Once the substrate surface
was completely covered, deposition proceeded with a more moderate
growth rate of 0.05 Ã…/cycle. According to X-ray diffraction,
the films were crystalline cubic Cu with a slight preference toward
(111) orientation. Based on scanning electron micrographs, the Cu
films were relatively smooth with the roughness increasing as a function
of both increasing temperature and thickness. A 54 nm film deposited
at the low temperature of 120 °C exhibited a low resistivity
of 1.9 μΩ·cm. Composition analysis on this film showed
a remarkably high purity of approximately 99.4 at.%, with the rest
being hydrogen and oxygen. The films could be deposited also on hydrogen
terminated Si, glass, Al<sub>2</sub>O<sub>3</sub>, TiN, and Ru, extending
the suitability of the process to a wide range of applications