Modeling of radiation damage in silicon solar cells

One MeV electron irradiation produces preponderantly isolated vacancy interstitial pairs. If neither of these defects is mobile, the concentration of each grows linearly with fluence. Annealing of damage depends on the nature of the damage. Vacancy interstitial pairs which are bound by an interaction such that they mutually annihilate rather than dissociate are termed close pairs; close pair recovery usually occurs at a lower temperature than the temperature at which long distance defect migration occurs. Annealing of the remaining frozen in damage occurs when a temperature is reached where the vacancy or interstitial is mobile; usually the interstitial is more mobile than the vacancy. The recovery occurs in two regimes which may be resoluable

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented