Матрічні моделі у дослідженні ринкового стану промислового підприємства

Україна, як відомо, історично є промисловою державою, тобто промисловий сектор складає основу національної економічної системи та обумовлює певні тенденції у розвитку усіх сфер економічної діяльності. Так, на 01.01.2013р. вітчизняний промисловий ринок охоплює приблизно 300 тис. виробничих підприємств, які займають десь 60% усього працюючого населення, з них близько 50% працює на великих підприємствах. Проте більше 40% промислових підприємств є збитковими; обсяг промислової продукції, що призначена для використання споживачами промислового ринку, за останні п’ять років зменшилася удвічі і складає сьогодні менше 10%

Applied Technological Direction of Power Plant Ash and Slag Waste Management when Kuznetsk Bituminous Coal is Burned

Currently a lot of power plants have a problem with storage of coal combustion solid by-products (ash and slag). Holding capacity of existing power plants available ash dumps were enlarged and modernized repeatedly. Many plants have two or even three of them. Today new ash dump construction is economically inconvenient due to need to assign new plots of land and their inconveniently big distance from a plant, which increase ash and slag transportation expenses. The goal of our research work is to find promising directions for ash and slag waste mass utilization based on Kuznetsk bituminous coals experimental data on ultimate composition and properties. The experimental research of ash, slag and their mixture samples from ash dumps brought us to conclusion that the most promising direction for these materials application in large quantities is construction industry including road construction. Be-sides, we lined up some other directions for ash, slag, and ash and slag mixture possible application. These directions might not provide mass utilization but they are promising from a point of view of the researched waste properties

Atomistic effects in reactive direct current sputter deposition

The aim of this work is to gain a better understanding of the reactive sputtering process, with special emphasis on explanations from a microscopic point of view. Several steps were undertaken towards this end: An already existing deposition system was upgraded with new pressure gauges and a quadrupole mass analyzer to meet the new requirements for total and partial pressure determination. In consequence, it was possible to switch from the macroscopic parameter pressure to the average number of collisions. Thin films of zinc oxide and silver were deposited, and their properties were studied. These could be modified in two distinct ways: First, this was done by variation of the deposition conditions. This concept was applied to the deposition of zinc oxide films. A strong correlation between stress, surface roughness and texture of the films on one side and the total pressure during deposition on the other was observed. This behavior could be related to the impact of energetic oxygen atoms. In a second step, this assumption was verified by resputtering experiments, in which films were prepared on substrates facing away from the target. The difference in deposition rate between films prepared with and without a backing microscope slides decreased with increasing pressure. For sufficiently high pressure, the deposition rate of directly deposited films could be described by the Keller-Simmons relation. The films were rough with low stress and weak texture. In the low pressure range, films were smooth and exhibited high stresses and strong orientation. This pronounced texture was caused by selective etching of the growing film. The deposition rate was lower than expected from Keller-Simmons. At the same time, the resputtered atoms lead to an increased deposition rate of the indirectly deposited films. A completely different approach was used for the optimization of the conductivity of thin silver films. It could be shown that the sheet resistance of these films is strongly correlated to their texture. The necessary texture could be obtained by depositing silver on top of zinc oxide. The orientation of the silver grains was determined by the orientation of the zinc oxide grains because of a low lattice mismatch between the silver (111) and zinc oxide (0001) plane. Thus it was possible to deposit films with strongly improved conductivity. In order to make predictions of film properties possible, simulations were performed. The existing models were enhanced by including the cathode potential as a simulated parameter. The related material properties are the ionization cross sections of the gas atoms, and the secondary electron yield of the target material. Another important parameter in these simulations is the sputter yield. This property was determined for a large number of materials by TRIM calculations. Also, the dependence of the yield on ion mass and energy was examined. Finally, the model for the sputter deposition process was extended for the use of two reactive gases. Applying this model to the deposition of titanium oxy-nitrides showed that, for example, the film stoichiometry is not governed by thermodynamics only, but that kinetics have a significant impact as well

Atomistic effects in reactive direct current sputter deposition

The aim of this work is to gain a better understanding of the reactive sputtering process, with special emphasis on explanations from a microscopic point of view. Several steps were undertaken towards this end: An already existing deposition system was upgraded with new pressure gauges and a quadrupole mass analyzer to meet the new requirements for total and partial pressure determination. In consequence, it was possible to switch from the macroscopic parameter pressure to the average number of collisions. Thin films of zinc oxide and silver were deposited, and their properties were studied. These could be modified in two distinct ways: First, this was done by variation of the deposition conditions. This concept was applied to the deposition of zinc oxide films. A strong correlation between stress, surface roughness and texture of the films on one side and the total pressure during deposition on the other was observed. This behavior could be related to the impact of energetic oxygen atoms. In a second step, this assumption was verified by resputtering experiments, in which films were prepared on substrates facing away from the target. The difference in deposition rate between films prepared with and without a backing microscope slides decreased with increasing pressure. For sufficiently high pressure, the deposition rate of directly deposited films could be described by the Keller-Simmons relation. The films were rough with low stress and weak texture. In the low pressure range, films were smooth and exhibited high stresses and strong orientation. This pronounced texture was caused by selective etching of the growing film. The deposition rate was lower than expected from Keller-Simmons. At the same time, the resputtered atoms lead to an increased deposition rate of the indirectly deposited films. A completely different approach was used for the optimization of the conductivity of thin silver films. It could be shown that the sheet resistance of these films is strongly correlated to their texture. The necessary texture could be obtained by depositing silver on top of zinc oxide. The orientation of the silver grains was determined by the orientation of the zinc oxide grains because of a low lattice mismatch between the silver (111) and zinc oxide (0001) plane. Thus it was possible to deposit films with strongly improved conductivity. In order to make predictions of film properties possible, simulations were performed. The existing models were enhanced by including the cathode potential as a simulated parameter. The related material properties are the ionization cross sections of the gas atoms, and the secondary electron yield of the target material. Another important parameter in these simulations is the sputter yield. This property was determined for a large number of materials by TRIM calculations. Also, the dependence of the yield on ion mass and energy was examined. Finally, the model for the sputter deposition process was extended for the use of two reactive gases. Applying this model to the deposition of titanium oxy-nitrides showed that, for example, the film stoichiometry is not governed by thermodynamics only, but that kinetics have a significant impact as well