Polymorphic common buzzards in time and space

The aim of this thesis was to investigate the evolutionary ecology of colour variation in a bird species. For this study we quantified the individual fitness of a bird of prey with a very variable plumage, the buzzard Buteo buteo. We have tried to unravel some mechanisms that maintain intra-specific colour variation and its functions in this species. We studied colour polymorphism from both a temporal and spatial perspective

Enhancement of p-GaN conductivity using PECVD SiOx

A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF solution. A significant improvement of the conductivity of the p-GaN layer has been obtained

Microstructural dependency of optical properties of m -plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.This project is funded by the European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013)/ERC grant agreement no 279361 (MACONS) and in part by the EPSRC (Grant Nos. EP/H047816/1 and EP/J001627/1).This is the author accepted manuscript. The final version is available from AIP via http://dx.doi.org/10.1063/1.492872

Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates

Indium gallium nitride (In(x)Ga(1-x)N) is a technologically important material for many optoelectronic devices, including LEDs and solar cells, but it remains a challenge to incorporate high levels of InN into the alloy while maintaining sample quality. A series of InGaN epilayers was grown with different hydrogen flow rates (0-200 sccm) and growth temperatures (680-750 °C) to obtain various InN fractions and bright emission in the range 390-480 nm. These 160-nm thick epilayers were characterized through several compositional techniques (wavelength dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscattering spectrometry) and cathodoluminescence hyperspectral imaging. The compositional analysis with the different techniques shows good agreement when taking into account compositional gradients evidenced in these layers. The addition of small amounts of hydrogen to the gas flow at lower growth temperatures is shown to maintain a high surface quality and luminescence homogeneity. This allowed InN fractions of up to ~16% to be incorporated with minimal peak energy variations over a mapped area while keeping a high material quality

Comparison of the haptic and visual deviations in a parallelity task

Deviations in both haptic and visual spatial experiments are thought to be caused by a biasing influence of an egocentric reference frame. The strength of this influence is strongly participant-dependent. By using a parallelity test, it is studied whether this strength is modality-independent. In both haptic and visual conditions, large, systematic and participant-dependent deviations were found. However, although the correlation between the haptic and visual deviations was significant, the explained variance due to a common factor was only 20%. Therefore, the degree to which a participant is “egocentric” depends on modality and possibly even more generally, on experimental condition

Origin of faceted surface hillocks on semi-polar (1 1 2 ¯ 2) GaN templates grown on pre-structured sapphire

The microstructure of semi-polar (1 1 2 2) GaN templates grown on pre-structured r-plane sapphire by metal–organic vapor phase epitaxy (MOVPE) followed by hydride vapor phase epitaxy (HVPE) has been characterised by transmission electron microscopy (TEM). It is found that dislocations originating from the inclined c-plane-like GaN/sapphire interface bend and then terminate either at the coalescence regions of the adjacent GaN stripes or at the SiO2 mask. However, the regions associated with the coalescence event during the MOVPE growth act as a source of dislocations and stacking faults in the subsequent growth process. More importantly, a direct link between the formation of a surface hillock, the presence of an inversion domain, and the preferential nucleation of randomly oriented GaN particles at a region containing a dislocation bundle originating from coalescence has been established. It is suggested that controlling the surface conditions of the MOVPE GaN layer before HVPE and optimising the HVPE nucleation process are important to avoid the surface hillocks.This work was financially supported by the European Commission (FP7) within the framework of the project “AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications” (ALIGHT) (Project no.: 280587) and by the Deutsche Forschungsgemeinschaft (DFG) within the framework of the project “Polarization Field Control in Nitride Light Emitters” (PolarCoN).This is the accepted manuscript for a paper published in Journal of Crystal Growth Volume 415, 1 April 2015, Pages 170–175, doi: 10.1016/j.jcrysgro.2014.12.04

Terpene synthases in cucumber (<i>Cucumis sativus</i>) and their contribution to herbivore-induced volatile terpenoid emission

Terpenoids play important roles in flavour, pollinator attraction and defence of plants. In cucumber (Cucumis sativus) they are important components of the herbivore‐induced plant volatile blend that attracts natural enemies of herbivores. We annotated the cucumber TERPENE SYNTHASE gene (CsTPS) family and characterized their involvement in the response towards herbivores with different feeding guilds using a combined molecular and biochemical approach. Transcripts of multiple CsTPS genes were upregulated in leaves upon herbivory and the products generated by the expressed proteins match the terpenoids recorded in the volatile blend released by herbivore‐damaged leaves. Spatial and temporal analysis of the promoter activity of CsTPS genes showed that cell content‐feeding spider mites (Tetranychus urticae) and thrips (Frankliniella occidentalis) induced promoter activity of CsTPS9 and CsTPS19 within hours after initiation of infestation, while phloem‐feeding aphids (Myzus persicae) induced CsTPS2 promoter activity. Our findings offer detailed insights into the involvement of the TPS gene family in the dynamics and fine‐tuning of the emission of herbivore‐induced plant volatiles in cucumber, and open a new avenue to understand molecular mechanisms that affect plant–herbivore interactions