Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter

The high reset current IR in unipolar resistance switching now poses major obstacles to practical applications in memory devices. In particular, the first IR-value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We found that the compliance current Icomp is a critical parameter for reducing IR-values. We therefore introduced an improved, simple, easy to use Icomp-limiter that stabilizes the forming process by drastically decreasing current overflow, in order to precisely control the Icomp- and subsequent IR-values.Comment: 15 pages, 4 figure

Weakly coupled s=1/2s = 1/2 quantum spin singlets in Ba3_{3}Cr2_{2}O8_{8}

Using single crystal inelastic neutron scattering with and without application of an external magnetic field and powder neutron diffraction, we have characterized magnetic interactions in Ba$_3$Cr$_2$O$_8$. Even without field, we found that there exist three singlet-to-triplet excitation modes in $(h,h,l)$ scattering plane. Our complete analysis shows that the three modes are due to spatially anisotropic interdimer interactions that are induced by local distortions of the tetrahedron of oxygens surrounding the Jahn-Teller active Cr$^{5+} (3d^1)$. The strong intradimer coupling of $J_0 = 2.38(2)$ meV and weak interdimer interactions ($|J_{\rm inter}| \leq 0.52(2)$ meV) makes Ba$_3$Cr$_2$O$_8$ a good model system for weakly-coupled $s = 1/2$ quantum spin dimers

Modulation of the Curie Temperature in Ferromagnetic/Ferroelectric Hybrid Double Quantum Wells

We propose a ferromagnetic/ferroelectric hybrid double quantum well structure, and present an investigation of the Curie temperature (Tc) modulation in this quantum structure. The combined effects of applied electric fields and spontaneous electric polarization are considered for a system that consists of a Mn \delta-doped well, a barrier, and a p-type ferroelectric well. We calculate the change in the envelope functions of carriers at the lowest energy sub-band, resulting from applied electric fields and switching the dipole polarization. By reversing the depolarizing field, we can achieve two different ferromagnetic transition temperatures of the ferromagnetic quantum well in a fixed applied electric field. The Curie temperature strongly depends on the position of the Mn \delta-doped layer and the polarization strength of the ferroelectric well.Comment: 9 pages, 5 figures, to be published in Phys. Rev. B (2006) minor revision: One of the line types is changed in Fig.