552 research outputs found

    Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines

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    Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of disparate technologies, which are compatible with CMOS processing, may allow extension of Moore's Law for a few more years. This paper provides a new approach towards the design and modeling of Memristor (Memory resistor) based Content Addressable Memory (MCAM) using a combination of memristor MOS devices to form the core of a memory/compare logic cell that forms the building block of the CAM architecture. The non-volatile characteristic and the nanoscale geometry together with compatibility of the memristor with CMOS processing technology increases the packing density, provides for new approaches towards power management through disabling CAM blocks without loss of stored data, reduces power dissipation, and has scope for speed improvement as the technology matures.Comment: 10 pages, 11 figure

    Voice vs. silence: the role of cognitive appraisal of and emotional response to stressors

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    Stress is in the nature of work, employees, teams, and organizations. Some speak up under stress, whereas others keep silent. Given that employee voice has long been recognized to enhance high-quality decisions and organizational effectiveness, understanding conditions under which employees practice voice is important. In this article, we combine appraisal theory, prospect theory, and threat-rigidity thesis so as to enrich our understanding of the relationship between stressors and voice. In so doing, our theory paper integrates threat-rigidity thesis, prospect theory, and appraisal theory on the basis of the interaction between cognition and emotion, and it explores the detailed cognition-emotion-behavior (voice) relationship

    Analog Weights in ReRAM DNN Accelerators

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    Artificial neural networks have become ubiquitous in modern life, which has triggered the emergence of a new class of application specific integrated circuits for their acceleration. ReRAM-based accelerators have gained significant traction due to their ability to leverage in-memory computations. In a crossbar structure, they can perform multiply-and-accumulate operations more efficiently than standard CMOS logic. By virtue of being resistive switches, ReRAM switches can only reliably store one of two states. This is a severe limitation on the range of values in a computational kernel. This paper presents a novel scheme in alleviating the single-bit-per-device restriction by exploiting frequency dependence of v-i plane hysteresis, and assigning kernel information not only to the device conductance but also partially distributing it to the frequency of a time-varying input. We show this approach reduces average power consumption for a single crossbar convolution by up to a factor of x16 for an unsigned 8-bit input image, where each convolutional process consumes a worst-case of 1.1mW, and reduces area by a factor of x8, without reducing accuracy to the level of binarized neural networks. This presents a massive saving in computing cost when there are many simultaneous in-situ multiply-and-accumulate processes occurring across different crossbars.Comment: 2019 IEEE International Conference on Artificial Intelligence Circuits and Systems, 5 pages, 4 figure

    Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms

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    The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases, approaching the electron band structure calculated using the local density approximation method. While the former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition, the latter suggests that its electronic correlations can be modified by foreign atoms. These results pave the way for promising device applications using graphene that is semiconducting and charge neutral.Comment: 16 pages, 3 figure

    Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes

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    In this study, nano-scale honeycomb-shaped structures with anti-reflection properties were successfully formed on SiC. The surface of 4H-SiC wafer after a conventional photolithography process was etched by inductively coupled plasma. We demonstrate that the reflection characteristic of the fabricated photodiodes has significantly reduced by 55% compared with the reference devices. As a result, the optical response Iillumination/Idark of the 4H-SiC photodiodes were enhanced up to 178%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing

    Nanopores of carbon nanotubes as practical hydrogen storage media

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    We report on hydrogen desorption mechanisms in the nanopores of multiwalled carbon nanotubes (MWCNTs). The as-grown MWCNTs show continuous walls that do not provide sites for hydrogen storage under ambient conditions. However, after treating the nanotubes with oxygen plasma to create nanopores in the MWCNTs, we observed the appearance of a new hydrogen desorption peak in the 300–350 K range. Furthermore, the calculations of density functional theory and molecular dynamics simulations confirmed that this peak could be attributed to the hydrogen that is physically adsorbed inside nanopores whose diameter is approximately 1 nm. Thus, we demonstrated that 1 nm nanopores in MWCNTs offer a promising route to hydrogen storage media for onboard practical applications
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